Comparison of Polycrystalline Cu(In,Ga)Se2 Device Efficiency with Junction Depth and Interfacial Structure

Research output: Contribution to journal › Article

NREL Publication Number

@article{322219dd68574b838f040d6d0309606d,

title = "Comparison of Polycrystalline Cu(In,Ga)Se2 Device Efficiency with Junction Depth and Interfacial Structure",

author = "NREL",

year = "1995",

doi = "10.1063/1.360669",

language = "American English",

volume = "78",

pages = "269--272",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "1",

}