Comparison of Recombination Dynamics in CH3NH3PbBr3 and CH3NH3PbI3 Perovskite Films: Influence of Exciton Binding Energy

Matthew Beard, Mengjin Yang, Ryan Crisp, Kai Zhu, Ye Yang, Zhen Li

Research output: Contribution to journalArticlepeer-review

349 Scopus Citations

Abstract

Understanding carrier recombination in semiconductors is a critical component when developing practical applications. Here we measure and compare the monomolecular, bimolecular, and trimolecular (Auger) recombination rate constants of CH3NH3PbBr3 and CH3NH3PbI3. The monomolecular and bimolecular recombination rate constants for both samples are limited by trap-assisted recombination. The bimolecular recombination rate constant for CH3NH3PbBr3 is 3.3 times larger than that for CH3NH3PbI3 and both are in line with that found for radiative recombination in other direct-gap semiconductors. The Auger recombination rate constant is 4 times larger in lead-bromide-based perovskite compared with lead-iodide-based perovskite and does not follow the reduced Auger rate when the bandgap increases. The increased Auger recombination rate, which is enhanced by Coulomb interactions, can be ascribed to the larger exciton binding energy, ≈40 meV, in CH3NH3PbBr3 compared with ≈13 meV in CH3NH3PbI3.

Original languageAmerican English
Pages (from-to)4688-4692
Number of pages5
JournalJournal of Physical Chemistry Letters
Volume6
Issue number23
DOIs
StatePublished - 2015

Bibliographical note

Publisher Copyright:
© 2015 American Chemical Society.

NREL Publication Number

  • NREL/JA-5900-65269

Keywords

  • carrier dynamics
  • MAPbBr3
  • MAPbI3
  • solar-photochemistry
  • transient absorption

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