Comparison of Techniques for Measuring Recombination Lifetime in Semiconductors: Abstract No. E11.5

Comparison of Techniques for Measuring Recombination Lifetime in Semiconductors: Abstract No. E11.5

NREL

Research output: Contribution to conference › Paper

Original language	American English
Number of pages	136
State	Published - 2005
Event	Semiconductor Defect Engineering Materials, Synthetic Structures and Devices: Materials Research Society Symposium - San Francisco, California Duration: 28 Mar 2005 → 1 Apr 2005

Conference

Conference	Semiconductor Defect Engineering Materials, Synthetic Structures and Devices: Materials Research Society Symposium
City	San Francisco, California
Period	28/03/05 → 1/04/05

NLR Publication Number

NREL/CP-520-37151

Cite this

@conference{270746a6bd204fbab382220c4ac4b05b,

title = "Comparison of Techniques for Measuring Recombination Lifetime in Semiconductors: Abstract No. E11.5",

author = "NREL",

year = "2005",

language = "American English",

note = "Semiconductor Defect Engineering Materials, Synthetic Structures and Devices: Materials Research Society Symposium ; Conference date: 28-03-2005 Through 01-04-2005",

}