Comparison of the Dilute Bismide and Nitride Alloys GaAsBi and GaAsN

Angelo Mascarenhas, Rajeev Kini, Yong Zhang, Ryan France, Aaron Ptak

Research output: Contribution to journalArticlepeer-review

14 Scopus Citations


Dilute III-V alloys containing N or Bi share many features that are common, but some that are distinct. In GaP and GaAs, both the substituent species N and Bi behave as isoelectronic impurity traps and both lead to a giant bandgap bowing phenomenon. The isolated N and Bi impurities generate bound states in GaP but resonant states in GaAs. N impurity pairs have been observed as bound states in GaP and in GaAs whereas Bi impurity pairs have not been observed as bound states in GaP nor in GaAs. Low temperature photoluminescence studies on GaAs1-xBix show undulations in the spectra but these are not associated with Bi-Bi pairs. Theoretical arguments for the differing behaviour of the N and Bi isolated impurities in GaAs as a function of pressure are provided.

Original languageAmerican English
Pages (from-to)504-507
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Issue number3
StatePublished - 2009

NREL Publication Number

  • NREL/CP-590-43661


  • bismide alloys
  • materials science
  • nitride alloys


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