Comparison of Thin Epitaxial Film Silicon Photovoltaics Fabricated on Monocrystalline and Polycrystalline Seed Layers on Glass

Charles W. Teplin; Sachit Grover; Adrian Chitu; Alexander Limanov; Monical Chahal; James Im; Daniel Amkreutz; Stefan Gall; Heayoung P. Yoon; Vincenzo Lasalvia; Paul Stradins; Kim M. Jones; Andrew G. Norman; David L. Young; Howard M. Branz; Benjamin G. Lee

doi:10.1002/pip.2505

Comparison of Thin Epitaxial Film Silicon Photovoltaics Fabricated on Monocrystalline and Polycrystalline Seed Layers on Glass

Charles W. Teplin, Sachit Grover, Adrian Chitu, Alexander Limanov, Monical Chahal, James Im, Daniel Amkreutz, Stefan Gall, Heayoung P. Yoon, Vincenzo Lasalvia, Paul Stradins, Kim M. Jones, Andrew G. Norman, David L. Young, Howard M. Branz, Benjamin G. Lee

Research output: Contribution to journal › Article › peer-review

9 Scopus Citations

Abstract

We fabricate thin epitaxial crystal silicon solar cells on display glass and fused silica substrates overcoated with a silicon seed layer. To confirm the quality of hot-wire chemical vapor deposition epitaxy, we grow a 2-μm-thick absorber on a (100) monocrystalline Si layer transfer seed on display glass and achieve 6.5% efficiency with an open circuit voltage (V_OC) of 586-mV without light-trapping features. This device enables the evaluation of seed layers on display glass. Using polycrystalline seeds formed from amorphous silicon by laser-induced mixed phase solidification (MPS) and electron beam crystallization, we demonstrate 2.9%, 476-mV (MPS) and 4.1%, 551-mV (electron beam crystallization) solar cells. Grain boundaries likely limit the solar cell grown on the MPS seed layer, and we establish an upper bound for the grain boundary recombination velocity (S_GB) of 1.6x10⁴-cm/s.

Original language	American English
Pages (from-to)	909-917
Number of pages	9
Journal	Progress in Photovoltaics: Research and Applications
Volume	23
Issue number	7
DOIs	https://doi.org/10.1002/pip.2505 https://doi.org/10.1002/pip.2505
State	Published - 2015

Bibliographical note

Publisher Copyright:
Copyright © 2014 John Wiley & Sons, Ltd.

NREL Publication Number

NREL/JA-5J00-64624

Keywords

epitaxy
silicon

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Teplin, C. W., Grover, S., Chitu, A., Limanov, A., Chahal, M., Im, J., Amkreutz, D., Gall, S., Yoon, H. P., Lasalvia, V., Stradins, P., Jones, K. M., Norman, A. G., Young, D. L., Branz, H. M., & Lee, B. G. (2015). Comparison of Thin Epitaxial Film Silicon Photovoltaics Fabricated on Monocrystalline and Polycrystalline Seed Layers on Glass. Progress in Photovoltaics: Research and Applications, 23(7), 909-917. https://doi.org/10.1002/pip.2505, https://doi.org/10.1002/pip.2505

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title = "Comparison of Thin Epitaxial Film Silicon Photovoltaics Fabricated on Monocrystalline and Polycrystalline Seed Layers on Glass",

abstract = "We fabricate thin epitaxial crystal silicon solar cells on display glass and fused silica substrates overcoated with a silicon seed layer. To confirm the quality of hot-wire chemical vapor deposition epitaxy, we grow a 2-μm-thick absorber on a (100) monocrystalline Si layer transfer seed on display glass and achieve 6.5% efficiency with an open circuit voltage (VOC) of 586-mV without light-trapping features. This device enables the evaluation of seed layers on display glass. Using polycrystalline seeds formed from amorphous silicon by laser-induced mixed phase solidification (MPS) and electron beam crystallization, we demonstrate 2.9%, 476-mV (MPS) and 4.1%, 551-mV (electron beam crystallization) solar cells. Grain boundaries likely limit the solar cell grown on the MPS seed layer, and we establish an upper bound for the grain boundary recombination velocity (SGB) of 1.6x104-cm/s.",

keywords = "epitaxy, silicon",

author = "Teplin, {Charles W.} and Sachit Grover and Adrian Chitu and Alexander Limanov and Monical Chahal and James Im and Daniel Amkreutz and Stefan Gall and Yoon, {Heayoung P.} and Vincenzo Lasalvia and Paul Stradins and Jones, {Kim M.} and Norman, {Andrew G.} and Young, {David L.} and Branz, {Howard M.} and Lee, {Benjamin G.}",

note = "Publisher Copyright: Copyright {\textcopyright} 2014 John Wiley & Sons, Ltd.",

year = "2015",

doi = "10.1002/pip.2505",

language = "American English",

volume = "23",

pages = "909--917",

journal = "Progress in Photovoltaics: Research and Applications",

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Teplin, CW, Grover, S, Chitu, A, Limanov, A, Chahal, M, Im, J, Amkreutz, D, Gall, S, Yoon, HP, Lasalvia, V, Stradins, P, Jones, KM, Norman, AG , Young, DL, Branz, HM & Lee, BG 2015, 'Comparison of Thin Epitaxial Film Silicon Photovoltaics Fabricated on Monocrystalline and Polycrystalline Seed Layers on Glass', Progress in Photovoltaics: Research and Applications, vol. 23, no. 7, pp. 909-917. https://doi.org/10.1002/pip.2505, https://doi.org/10.1002/pip.2505

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T1 - Comparison of Thin Epitaxial Film Silicon Photovoltaics Fabricated on Monocrystalline and Polycrystalline Seed Layers on Glass

AU - Teplin, Charles W.

AU - Grover, Sachit

AU - Chitu, Adrian

AU - Limanov, Alexander

AU - Chahal, Monical

AU - Im, James

AU - Amkreutz, Daniel

AU - Gall, Stefan

AU - Yoon, Heayoung P.

AU - Lasalvia, Vincenzo

AU - Stradins, Paul

AU - Jones, Kim M.

AU - Norman, Andrew G.

AU - Young, David L.

AU - Branz, Howard M.

AU - Lee, Benjamin G.

PY - 2015

Y1 - 2015

N2 - We fabricate thin epitaxial crystal silicon solar cells on display glass and fused silica substrates overcoated with a silicon seed layer. To confirm the quality of hot-wire chemical vapor deposition epitaxy, we grow a 2-μm-thick absorber on a (100) monocrystalline Si layer transfer seed on display glass and achieve 6.5% efficiency with an open circuit voltage (VOC) of 586-mV without light-trapping features. This device enables the evaluation of seed layers on display glass. Using polycrystalline seeds formed from amorphous silicon by laser-induced mixed phase solidification (MPS) and electron beam crystallization, we demonstrate 2.9%, 476-mV (MPS) and 4.1%, 551-mV (electron beam crystallization) solar cells. Grain boundaries likely limit the solar cell grown on the MPS seed layer, and we establish an upper bound for the grain boundary recombination velocity (SGB) of 1.6x104-cm/s.

AB - We fabricate thin epitaxial crystal silicon solar cells on display glass and fused silica substrates overcoated with a silicon seed layer. To confirm the quality of hot-wire chemical vapor deposition epitaxy, we grow a 2-μm-thick absorber on a (100) monocrystalline Si layer transfer seed on display glass and achieve 6.5% efficiency with an open circuit voltage (VOC) of 586-mV without light-trapping features. This device enables the evaluation of seed layers on display glass. Using polycrystalline seeds formed from amorphous silicon by laser-induced mixed phase solidification (MPS) and electron beam crystallization, we demonstrate 2.9%, 476-mV (MPS) and 4.1%, 551-mV (electron beam crystallization) solar cells. Grain boundaries likely limit the solar cell grown on the MPS seed layer, and we establish an upper bound for the grain boundary recombination velocity (SGB) of 1.6x104-cm/s.

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KW - silicon

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JO - Progress in Photovoltaics: Research and Applications

JF - Progress in Photovoltaics: Research and Applications

IS - 7

ER -

Comparison of Thin Epitaxial Film Silicon Photovoltaics Fabricated on Monocrystalline and Polycrystalline Seed Layers on Glass

Abstract

Bibliographical note

NREL Publication Number

Keywords

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