Abstract
Two-junction tandem thin-film photovoltaic cells are composed of a wide-bandgap top cell overlying a narrower-bandgap bottom cell. CdTe, with a bandgap of 1.5 eV, can function effectively as a top cell when paired with a bottom cell of appropriate bandgap. Effective twojunction cells require a back contact to the top cell that is transparent to the sub-bandgap radiation absorbed by the bottom cell. In this study, we fabricate CdTe top cells with transparent back contacts. We form the ohmic contact to CdTe by using semi-transparent Cu-doped ZnTe as the back-contact interface layer. We compare Al-doped ZnO, indium tin oxide, and single-wall carbon nanotube networks for use as the final transparent conductor. These transparent cells demonstrate device efficiencies comparable to those of control devices using the standard Ti metallization.
Original language | American English |
---|---|
Pages | 2443-2447 |
Number of pages | 5 |
DOIs | |
State | Published - 2009 |
Event | 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia, PA, United States Duration: 7 Jun 2009 → 12 Jun 2009 |
Conference
Conference | 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 |
---|---|
Country/Territory | United States |
City | Philadelphia, PA |
Period | 7/06/09 → 12/06/09 |
NREL Publication Number
- NREL/CP-520-46059
Keywords
- indium tin oxide
- ohmic contacts
- photonic band gap
- photovoltaic cells
- photovoltaic systems
- solar power generation
- thin film devices
- transistors
- zinc compounds
- zinc oxide