Abstract
The band gap of Ga0.5In0.5P is studied as a function of growth temperature, growth rate, and substrate misorientation. As each of these parameters is independently varied the band gap first decreases, then increases, resulting in `U' shaped curves. Each `U' shaped curve shifts if any other growth parameter is varied. The data presented here can be divided into two regions of parameter space. In the low temperature, low substrate misorientation, high growth rate region, the band gap is shown to decrease with increasing growth temperature, decreasing growth rate, and increasing substrate misorientation. In the high temperature, high substrate misorientation, low growth rate region, the opposite trends are observed. The implications of these data on the ordering mechanism are discussed.
Original language | American English |
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Pages | 83-88 |
Number of pages | 6 |
DOIs | |
State | Published - 1993 |
Event | Materials Research Society Spring Meeting - San Francisco, CA, USA Duration: 12 Apr 1993 → 15 Apr 1993 |
Conference
Conference | Materials Research Society Spring Meeting |
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City | San Francisco, CA, USA |
Period | 12/04/93 → 15/04/93 |
NREL Publication Number
- NREL/CP-451-5490