Composition and Structure of CuInSe2 Thin Films Prepared by Vacuum Evaporation of the Constituent Elements

Neelkanth G. Dhere; M. Cristina Loureno̧; Ramesh G. Dhere; Lawrence L. Kazmerski

doi:10.1016/0379-6787(84)90092-9

Composition and Structure of CuInSe2 Thin Films Prepared by Vacuum Evaporation of the Constituent Elements

Neelkanth G. Dhere, M. Cristina Loureno̧, Ramesh G. Dhere, Lawrence L. Kazmerski

Materials Science

Instituto Militar de Engenharia

Research output: Contribution to journal › Article › peer-review

12 Scopus Citations

Abstract

Further compositional and structural studies of CuInSe₂ thin films deposited by co-evaporation of the constituent elements in high vacuum are presented. The morphology, composition and crystallographic structure of films grown at a substrate temperature of 350°C and with thicknesses in the range 0.15-1.0 μm are discussed. Characterization includes Auger electron spectroscopy, X-ray and electron diffraction and optical absorption spectroscopy. Stoichiometric CuInSe₂ thin films are obtained with the chalcopyrite structure and with grain sizes in the range 0.2-0.6 μm, band gaps near 1.02-1.04 eV and absorption coefficients which exceed 1 × 10⁵ cm^-1.

Original language	American English
Pages (from-to)	59-65
Number of pages	7
Journal	Solar Cells
Volume	13
Issue number	1
DOIs	https://doi.org/10.1016/0379-6787(84)90092-9 https://doi.org/10.1016/0379-6787(84)90092-9
State	Published - 1984

Bibliographical note

Work performed by Instituto Militar de Engenharia, Rio de Janeiro, Brazil, and Solar Energy Research Institute, Golden, Colorado

NREL Publication Number

ACNR/JA-213-4897

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title = "Composition and Structure of CuInSe2 Thin Films Prepared by Vacuum Evaporation of the Constituent Elements",

abstract = "Further compositional and structural studies of CuInSe2 thin films deposited by co-evaporation of the constituent elements in high vacuum are presented. The morphology, composition and crystallographic structure of films grown at a substrate temperature of 350°C and with thicknesses in the range 0.15-1.0 μm are discussed. Characterization includes Auger electron spectroscopy, X-ray and electron diffraction and optical absorption spectroscopy. Stoichiometric CuInSe2 thin films are obtained with the chalcopyrite structure and with grain sizes in the range 0.2-0.6 μm, band gaps near 1.02-1.04 eV and absorption coefficients which exceed 1 × 105 cm-1.",

author = "Dhere, {Neelkanth G.} and {Cristina Louren{\c o}}, M. and Dhere, {Ramesh G.} and Kazmerski, {Lawrence L.}",

note = "Work performed by Instituto Militar de Engenharia, Rio de Janeiro, Brazil, and Solar Energy Research Institute, Golden, Colorado",

year = "1984",

doi = "10.1016/0379-6787(84)90092-9",

language = "American English",

volume = "13",

pages = "59--65",

journal = "Solar Cells",

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T1 - Composition and Structure of CuInSe2 Thin Films Prepared by Vacuum Evaporation of the Constituent Elements

AU - Dhere, Neelkanth G.

AU - Cristina Loureno̧, M.

AU - Dhere, Ramesh G.

AU - Kazmerski, Lawrence L.

N1 - Work performed by Instituto Militar de Engenharia, Rio de Janeiro, Brazil, and Solar Energy Research Institute, Golden, Colorado

PY - 1984

Y1 - 1984

N2 - Further compositional and structural studies of CuInSe2 thin films deposited by co-evaporation of the constituent elements in high vacuum are presented. The morphology, composition and crystallographic structure of films grown at a substrate temperature of 350°C and with thicknesses in the range 0.15-1.0 μm are discussed. Characterization includes Auger electron spectroscopy, X-ray and electron diffraction and optical absorption spectroscopy. Stoichiometric CuInSe2 thin films are obtained with the chalcopyrite structure and with grain sizes in the range 0.2-0.6 μm, band gaps near 1.02-1.04 eV and absorption coefficients which exceed 1 × 105 cm-1.

AB - Further compositional and structural studies of CuInSe2 thin films deposited by co-evaporation of the constituent elements in high vacuum are presented. The morphology, composition and crystallographic structure of films grown at a substrate temperature of 350°C and with thicknesses in the range 0.15-1.0 μm are discussed. Characterization includes Auger electron spectroscopy, X-ray and electron diffraction and optical absorption spectroscopy. Stoichiometric CuInSe2 thin films are obtained with the chalcopyrite structure and with grain sizes in the range 0.2-0.6 μm, band gaps near 1.02-1.04 eV and absorption coefficients which exceed 1 × 105 cm-1.

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U2 - 10.1016/0379-6787(84)90092-9

DO - 10.1016/0379-6787(84)90092-9

M3 - Article

AN - SCOPUS:0021517692

SN - 0379-6787

VL - 13

SP - 59

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JO - Solar Cells

JF - Solar Cells

IS - 1

ER -

Composition and Structure of CuInSe2 Thin Films Prepared by Vacuum Evaporation of the Constituent Elements

Abstract

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