Composition Dependence of Schottky Barrier Heights and Bandgap Energies of GaNxAs1-x Synthesized by Ion Implantation and Pulsed-Laser Melting: Article No. 113722

Research output: Contribution to journalArticlepeer-review

Original languageAmerican English
Number of pages6
JournalJournal of Applied Physics
Volume104
Issue number11
DOIs
StatePublished - 2008

NREL Publication Number

  • NREL/JA-520-45101

Keywords

  • basic sciences

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