Comprehensive Study of Anomalous Conduction Band Structure of InxGa1-xAs1-yNy

C. Skierbiszewski, P. Perlin, P. Wiśniewski, A. Presz, T. Suski, J. Geisz, W. Jantsch, D. Mars

Research output: Contribution to conferencePaperpeer-review


Using free standing layer of InGaAsN we have succeeded in measuring the optical absorption in very broad spectral range (0.8-2.5eV). This gave us an insight into the conduction band density of states for the energies higher than the energy gap of this compound. By combining Hall effect measurements with determination of plasma edge frequency in infrared reflectivity for differently doped samples we were able to deduce the density of states, conduction band electrons effective mass and dispersion relation. In particular it turned out that both i) experimentally measured dispersion relation of the conduction band shows extremely high degree of nonparabolicity and consistently ii) the effective mass of electrons is few times larger than that corresponding to GaAs of the same electron concentration. So far the obtained experimental results are in line with recently proposed band anticrossing model of the electronic structure of II-N-V alloys.

Original languageAmerican English
StatePublished - 2001
Externally publishedYes
EventGaN and Related Alloys 2000 - Boston, MA, United States
Duration: 27 Nov 20001 Dec 2000


ConferenceGaN and Related Alloys 2000
Country/TerritoryUnited States
CityBoston, MA

NREL Publication Number

  • NREL/CP-520-32086


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