Conduction-Band-Resonant Nitrogen-Induced Levels in GaAs1-xNx with x<0.03

J. D. Perkins; A. Mascarenhas; J. F. Geisz; D. J. Friedman

doi:10.1103/PhysRevB.64.121301

Conduction-Band-Resonant Nitrogen-Induced Levels in GaAs1-xNx with x<0.03

J. D. Perkins, A. Mascarenhas, J. F. Geisz, D. J. Friedman

Chemistry and Nanoscience

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

1 Scopus Citations

Abstract

We report electroreflectance spectra between 1 and 4 eV for (formula presented) samples with (formula presented) In addition to four intrinsic GaAs transitions, three nitrogen-induced optical transitions, (formula presented) (formula presented) and (formula presented) were observed. The weak and heretofore unknown (formula presented) transition was observed in four samples with 0.1 to 2.4 % nitrogen and occurs 0.1 to 0.3 eV below the ∼3 eV intrinsic (formula presented) transition. Opposite to (formula presented) decreases in energy with increasing nitrogen content. Furthermore, in the dilute limit, both (formula presented) and (formula presented) appear to converge to the known conduction-band-resonant nitrogen-impurity level (formula presented)

Original language	American English
Article number	121301
Number of pages	4
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	64
Issue number	12
DOIs	https://doi.org/10.1103/PhysRevB.64.121301 https://doi.org/10.1103/PhysRevB.64.121301
State	Published - 2001

NREL Publication Number

NREL/JA-520-31812

Keywords

electronic structure
gallium arsenides
nitrogen
spectra

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title = "Conduction-Band-Resonant Nitrogen-Induced Levels in GaAs1-xNx with x<0.03",

abstract = "We report electroreflectance spectra between 1 and 4 eV for (formula presented) samples with (formula presented) In addition to four intrinsic GaAs transitions, three nitrogen-induced optical transitions, (formula presented) (formula presented) and (formula presented) were observed. The weak and heretofore unknown (formula presented) transition was observed in four samples with 0.1 to 2.4 % nitrogen and occurs 0.1 to 0.3 eV below the ∼3 eV intrinsic (formula presented) transition. Opposite to (formula presented) decreases in energy with increasing nitrogen content. Furthermore, in the dilute limit, both (formula presented) and (formula presented) appear to converge to the known conduction-band-resonant nitrogen-impurity level (formula presented)",

keywords = "electronic structure, gallium arsenides, nitrogen, spectra",

author = "Perkins, {J. D.} and A. Mascarenhas and Geisz, {J. F.} and Friedman, {D. J.}",

year = "2001",

doi = "10.1103/PhysRevB.64.121301",

language = "American English",

volume = "64",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

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TY - JOUR

T1 - Conduction-Band-Resonant Nitrogen-Induced Levels in GaAs1-xNx with x<0.03

AU - Perkins, J. D.

AU - Mascarenhas, A.

AU - Geisz, J. F.

AU - Friedman, D. J.

PY - 2001

Y1 - 2001

N2 - We report electroreflectance spectra between 1 and 4 eV for (formula presented) samples with (formula presented) In addition to four intrinsic GaAs transitions, three nitrogen-induced optical transitions, (formula presented) (formula presented) and (formula presented) were observed. The weak and heretofore unknown (formula presented) transition was observed in four samples with 0.1 to 2.4 % nitrogen and occurs 0.1 to 0.3 eV below the ∼3 eV intrinsic (formula presented) transition. Opposite to (formula presented) decreases in energy with increasing nitrogen content. Furthermore, in the dilute limit, both (formula presented) and (formula presented) appear to converge to the known conduction-band-resonant nitrogen-impurity level (formula presented)

AB - We report electroreflectance spectra between 1 and 4 eV for (formula presented) samples with (formula presented) In addition to four intrinsic GaAs transitions, three nitrogen-induced optical transitions, (formula presented) (formula presented) and (formula presented) were observed. The weak and heretofore unknown (formula presented) transition was observed in four samples with 0.1 to 2.4 % nitrogen and occurs 0.1 to 0.3 eV below the ∼3 eV intrinsic (formula presented) transition. Opposite to (formula presented) decreases in energy with increasing nitrogen content. Furthermore, in the dilute limit, both (formula presented) and (formula presented) appear to converge to the known conduction-band-resonant nitrogen-impurity level (formula presented)

KW - electronic structure

KW - gallium arsenides

KW - nitrogen

KW - spectra

UR - http://www.scopus.com/inward/record.url?scp=85038284051&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.64.121301

DO - 10.1103/PhysRevB.64.121301

M3 - Article

AN - SCOPUS:85038284051

SN - 1098-0121

VL - 64

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 12

M1 - 121301

ER -

Conduction-Band-Resonant Nitrogen-Induced Levels in GaAs1-xNx with x<0.03

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