Conduction-Band-Resonant Nitrogen-Induced Levels in GaAs1-xNx with x<0.03

J. D. Perkins, A. Mascarenhas, J. F. Geisz, D. J. Friedman

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We report electroreflectance spectra between 1 and 4 eV for (formula presented) samples with (formula presented) In addition to four intrinsic GaAs transitions, three nitrogen-induced optical transitions, (formula presented) (formula presented) and (formula presented) were observed. The weak and heretofore unknown (formula presented) transition was observed in four samples with 0.1 to 2.4 % nitrogen and occurs 0.1 to 0.3 eV below the ∼3 eV intrinsic (formula presented) transition. Opposite to (formula presented) decreases in energy with increasing nitrogen content. Furthermore, in the dilute limit, both (formula presented) and (formula presented) appear to converge to the known conduction-band-resonant nitrogen-impurity level (formula presented)

Original languageAmerican English
Article number121301
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number12
StatePublished - 2001

NREL Publication Number

  • NREL/JA-520-31812


  • electronic structure
  • gallium arsenides
  • nitrogen
  • spectra


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