Conductivity and Quenched-In Defects in Hydrogenated Amorphous Silicon

Research output: Contribution to journal › Article

Work performed by Massachusetts Institute of Technology, Cambridge, Massachusetts

NREL Publication Number

@article{78b8ea526fce493ca4acb0f6d047c487,

title = "Conductivity and Quenched-In Defects in Hydrogenated Amorphous Silicon",

author = "NREL",

note = "Work performed by Massachusetts Institute of Technology, Cambridge, Massachusetts",

year = "1987",

doi = "10.1103/PhysRevB.36.7934",

language = "American English",

volume = "36",

pages = "7934--7940",

journal = "Physical Review B",

issn = "0163-1829",

publisher = "American Institute of Physics",

number = "15",

}

TY - JOUR

T1 - Conductivity and Quenched-In Defects in Hydrogenated Amorphous Silicon

AU - NREL, null

N1 - Work performed by Massachusetts Institute of Technology, Cambridge, Massachusetts

PY - 1987

Y1 - 1987

U2 - 10.1103/PhysRevB.36.7934

DO - 10.1103/PhysRevB.36.7934

M3 - Article

SN - 0163-1829

VL - 36

SP - 7934

EP - 7940

JO - Physical Review B

JF - Physical Review B

IS - 15

ER -