Confirmation of the Dominant Defect Mechanism in Amorphous In-Zn-O Through the Application of in Situ Brouwer Analysis

Thomas Gennett; David Ginley; Stephanie Moffitt; Alexander Adler; Thomas Mason; John Perkins

doi:10.1111/jace.13518

Confirmation of the Dominant Defect Mechanism in Amorphous In-Zn-O Through the Application of in Situ Brouwer Analysis

Thomas Gennett, David Ginley, Stephanie Moffitt, Alexander Adler, Thomas Mason, John Perkins

Northwestern University

Research output: Contribution to journal › Article › peer-review

8 Scopus Citations

Abstract

The dominant point defect mechanism of amorphous (a-) indium zinc oxide (IZO) was probed through in situ electrical characterization of sputtered a-IZO thin films in response to changes in oxygen partial pressure (pO2) at 300°C. The results yielded a power law dependence of conductivity (σ) versus pO2 of ∼1/6. This experimental method, known as Brouwer analysis, confirms doubly-charged oxygen vacancies as the dominant defect species in a-IZO. The success of this study suggests that Brouwer analysis is a viable method for studying the defect mechanisms of amorphous oxides.

Original language	American English
Pages (from-to)	2099-2103
Number of pages	5
Journal	Journal of the American Ceramic Society
Volume	98
Issue number	7
DOIs	https://doi.org/10.1111/jace.13518 https://doi.org/10.1111/jace.13518
State	Published - 2015

Bibliographical note

Publisher Copyright:
© 2015 The American Ceramic Society.

NREL Publication Number

NREL/JA-5900-64948

Keywords

characterization
defect mechanisms
thin films

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title = "Confirmation of the Dominant Defect Mechanism in Amorphous In-Zn-O Through the Application of in Situ Brouwer Analysis",

abstract = "The dominant point defect mechanism of amorphous (a-) indium zinc oxide (IZO) was probed through in situ electrical characterization of sputtered a-IZO thin films in response to changes in oxygen partial pressure (pO2) at 300°C. The results yielded a power law dependence of conductivity (σ) versus pO2 of ∼1/6. This experimental method, known as Brouwer analysis, confirms doubly-charged oxygen vacancies as the dominant defect species in a-IZO. The success of this study suggests that Brouwer analysis is a viable method for studying the defect mechanisms of amorphous oxides.",

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AU - Gennett, Thomas

AU - Ginley, David

AU - Moffitt, Stephanie

AU - Adler, Alexander

AU - Mason, Thomas

AU - Perkins, John

PY - 2015

Y1 - 2015

N2 - The dominant point defect mechanism of amorphous (a-) indium zinc oxide (IZO) was probed through in situ electrical characterization of sputtered a-IZO thin films in response to changes in oxygen partial pressure (pO2) at 300°C. The results yielded a power law dependence of conductivity (σ) versus pO2 of ∼1/6. This experimental method, known as Brouwer analysis, confirms doubly-charged oxygen vacancies as the dominant defect species in a-IZO. The success of this study suggests that Brouwer analysis is a viable method for studying the defect mechanisms of amorphous oxides.

AB - The dominant point defect mechanism of amorphous (a-) indium zinc oxide (IZO) was probed through in situ electrical characterization of sputtered a-IZO thin films in response to changes in oxygen partial pressure (pO2) at 300°C. The results yielded a power law dependence of conductivity (σ) versus pO2 of ∼1/6. This experimental method, known as Brouwer analysis, confirms doubly-charged oxygen vacancies as the dominant defect species in a-IZO. The success of this study suggests that Brouwer analysis is a viable method for studying the defect mechanisms of amorphous oxides.

KW - characterization

KW - defect mechanisms

KW - thin films

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AN - SCOPUS:85027917249

SN - 0002-7820

VL - 98

SP - 2099

EP - 2103

JO - Journal of the American Ceramic Society

JF - Journal of the American Ceramic Society

IS - 7

ER -

Confirmation of the Dominant Defect Mechanism in Amorphous In-Zn-O Through the Application of in Situ Brouwer Analysis

Abstract

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Keywords

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