Confirmation of the Impurity-Band Model for GaP1-xNx

B. Fluegel; Yong Zhang; J. F. Geisz; A. Mascarenhas

doi:10.1103/PhysRevB.72.073203

Confirmation of the Impurity-Band Model for GaP1-xNx

B. Fluegel, Yong Zhang, J. F. Geisz, A. Mascarenhas

Chemistry and Nanoscience

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

22 Scopus Citations

Abstract

Low-temperature absorption studies on freestanding Ga P1-x Nx films provide direct experimental evidence that the host conduction band minimum (CBM) near X1C does not plunge downward with increased nitrogen doping contrary to what has been suggested recently, but in fact remains stationary for x up to 0.1%. This, combined with the results of earlier studies of the CBM at Γ and conduction band edge near L, confirms that the giant band-gap lowering observed in Ga P1-x Nx results from a CBM that evolves purely from nitrogen impurity bands.

Original language	American English
Article number	073203
Number of pages	4
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	72
Issue number	7
DOIs	https://doi.org/10.1103/PhysRevB.72.073203 https://doi.org/10.1103/PhysRevB.72.073203
State	Published - 15 Aug 2005

NREL Publication Number

NREL/JA-590-39369

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title = "Confirmation of the Impurity-Band Model for GaP1-xNx",

abstract = "Low-temperature absorption studies on freestanding Ga P1-x Nx films provide direct experimental evidence that the host conduction band minimum (CBM) near X1C does not plunge downward with increased nitrogen doping contrary to what has been suggested recently, but in fact remains stationary for x up to 0.1%. This, combined with the results of earlier studies of the CBM at Γ and conduction band edge near L, confirms that the giant band-gap lowering observed in Ga P1-x Nx results from a CBM that evolves purely from nitrogen impurity bands.",

author = "B. Fluegel and Yong Zhang and Geisz, {J. F.} and A. Mascarenhas",

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AU - Geisz, J. F.

AU - Mascarenhas, A.

PY - 2005/8/15

Y1 - 2005/8/15

N2 - Low-temperature absorption studies on freestanding Ga P1-x Nx films provide direct experimental evidence that the host conduction band minimum (CBM) near X1C does not plunge downward with increased nitrogen doping contrary to what has been suggested recently, but in fact remains stationary for x up to 0.1%. This, combined with the results of earlier studies of the CBM at Γ and conduction band edge near L, confirms that the giant band-gap lowering observed in Ga P1-x Nx results from a CBM that evolves purely from nitrogen impurity bands.

AB - Low-temperature absorption studies on freestanding Ga P1-x Nx films provide direct experimental evidence that the host conduction band minimum (CBM) near X1C does not plunge downward with increased nitrogen doping contrary to what has been suggested recently, but in fact remains stationary for x up to 0.1%. This, combined with the results of earlier studies of the CBM at Γ and conduction band edge near L, confirms that the giant band-gap lowering observed in Ga P1-x Nx results from a CBM that evolves purely from nitrogen impurity bands.

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ER -

Confirmation of the Impurity-Band Model for GaP1-xNx

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