Confirmation of the Impurity-Band Model for GaP1-xNx

B. Fluegel, Yong Zhang, J. F. Geisz, A. Mascarenhas

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22 Scopus Citations


Low-temperature absorption studies on freestanding Ga P1-x Nx films provide direct experimental evidence that the host conduction band minimum (CBM) near X1C does not plunge downward with increased nitrogen doping contrary to what has been suggested recently, but in fact remains stationary for x up to 0.1%. This, combined with the results of earlier studies of the CBM at Γ and conduction band edge near L, confirms that the giant band-gap lowering observed in Ga P1-x Nx results from a CBM that evolves purely from nitrogen impurity bands.

Original languageAmerican English
Article number073203
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number7
StatePublished - 15 Aug 2005

NREL Publication Number

  • NREL/JA-590-39369


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