Abstract
The deposition of silicon nitride thin films using a hot wire chemical vapor deposition (CVD) technique was investigated. The thin film deposition was enhanced by the addition of H 2 to the process. Growth of high quality films was found possible at low substrate temperatures. Near-perfect conformal coverage on nano-size features was exhibited by the thin films with H dilution. The silicon nitride film with a thickness of 500-Å was capable of giving a nearly 100% surface coverage on a 100 nm scale object, only at a optimized conditions.
Original language | American English |
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Pages (from-to) | 338-340 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 84 |
Issue number | 3 |
DOIs | |
State | Published - 2004 |
NREL Publication Number
- NREL/JA-520-34729