Conformal Thin-Film Silicon Nitride Deposited by Hot-Wire Chemical Vapor Deposition

Qi Wang; Scott Ward; Lynn Gedvilas; Brian Keyes; Errol Sanchez; Shulin Wang

doi:10.1063/1.1640803

Conformal Thin-Film Silicon Nitride Deposited by Hot-Wire Chemical Vapor Deposition

Qi Wang, Scott Ward, Lynn Gedvilas, Brian Keyes, Errol Sanchez, Shulin Wang

Materials, Chemical, and Computational Science Research Operations

Research output: Contribution to journal › Article › peer-review

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Abstract

The deposition of silicon nitride thin films using a hot wire chemical vapor deposition (CVD) technique was investigated. The thin film deposition was enhanced by the addition of H ₂ to the process. Growth of high quality films was found possible at low substrate temperatures. Near-perfect conformal coverage on nano-size features was exhibited by the thin films with H dilution. The silicon nitride film with a thickness of 500-Å was capable of giving a nearly 100% surface coverage on a 100 nm scale object, only at a optimized conditions.

Original language	American English
Pages (from-to)	338-340
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	3
DOIs	https://doi.org/10.1063/1.1640803 https://doi.org/10.1063/1.1640803
State	Published - 2004

NREL Publication Number

NREL/JA-520-34729

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title = "Conformal Thin-Film Silicon Nitride Deposited by Hot-Wire Chemical Vapor Deposition",

abstract = "The deposition of silicon nitride thin films using a hot wire chemical vapor deposition (CVD) technique was investigated. The thin film deposition was enhanced by the addition of H 2 to the process. Growth of high quality films was found possible at low substrate temperatures. Near-perfect conformal coverage on nano-size features was exhibited by the thin films with H dilution. The silicon nitride film with a thickness of 500-{\AA} was capable of giving a nearly 100\% surface coverage on a 100 nm scale object, only at a optimized conditions.",

author = "Qi Wang and Scott Ward and Lynn Gedvilas and Brian Keyes and Errol Sanchez and Shulin Wang",

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journal = "Applied Physics Letters",

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AU - Wang, Qi

AU - Ward, Scott

AU - Gedvilas, Lynn

AU - Keyes, Brian

AU - Sanchez, Errol

AU - Wang, Shulin

PY - 2004

Y1 - 2004

N2 - The deposition of silicon nitride thin films using a hot wire chemical vapor deposition (CVD) technique was investigated. The thin film deposition was enhanced by the addition of H 2 to the process. Growth of high quality films was found possible at low substrate temperatures. Near-perfect conformal coverage on nano-size features was exhibited by the thin films with H dilution. The silicon nitride film with a thickness of 500-Å was capable of giving a nearly 100% surface coverage on a 100 nm scale object, only at a optimized conditions.

AB - The deposition of silicon nitride thin films using a hot wire chemical vapor deposition (CVD) technique was investigated. The thin film deposition was enhanced by the addition of H 2 to the process. Growth of high quality films was found possible at low substrate temperatures. Near-perfect conformal coverage on nano-size features was exhibited by the thin films with H dilution. The silicon nitride film with a thickness of 500-Å was capable of giving a nearly 100% surface coverage on a 100 nm scale object, only at a optimized conditions.

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DO - 10.1063/1.1640803

M3 - Article

AN - SCOPUS:1242332787

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EP - 340

JO - Applied Physics Letters

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ER -

Conformal Thin-Film Silicon Nitride Deposited by Hot-Wire Chemical Vapor Deposition

Abstract

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