Abstract
Methods for contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication are provided. In one embodiment, a method for fabricating an electrical semiconductor device comprises: a first step that includes gettering of impurities from a semiconductor wafer and forming a backsurface field; and a second step that includes forming a frontcontact for the semiconductor wafer, wherein the second step is performed after completion of the first step.
| Original language | American English |
|---|---|
| Patent number | 8,735,204 |
| Filing date | 27/05/14 |
| State | Published - 2014 |
Bibliographical note
Assignee: Alliance for Sustainable Energy, LLC (Golden, CO)NREL Publication Number
- NREL/PT-5J00-62978