Contactless Electroreflectance Studies of Ultra-Dilute GaAs1-xBix Alloys: Article No. 035018

Leknath Bhusel; Aaron Ptak; Ryan France; Angelo Mascarenhas

doi:10.1088/0268-1242/24/3/035018

Contactless Electroreflectance Studies of Ultra-Dilute GaAs1-xBix Alloys: Article No. 035018

Leknath Bhusel, Aaron Ptak, Ryan France, Angelo Mascarenhas

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

Abstract

In this work we report a large effect due to relativistic corrections in the electronic structure of very dilute GaAs1-xBix (x < 0.0025) thick epitaxial layers. The variation of the spin-orbit split-off band for x as small as 0.0001 is reported. Very thick (2-3 um) epilayers were grown by molecular-beam epitaxy to isolate the transitions between the conduction band and the spin-orbit split-off band from the epilayer and the substrate, using contactless electroreflectance. Thick epitaxial quality samples with precise control of the spin-orbit splitting are interesting for applications in spin-based electronics.

Original language	American English
Number of pages	4
Journal	Semiconductor Science and Technology
Volume	24
Issue number	3
DOIs	https://doi.org/10.1088/0268-1242/24/3/035018
State	Published - 2009

NREL Publication Number

NREL/JA-590-44600

Keywords

basic sciences
materials science

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10.1088/0268-1242/24/3/035018

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abstract = "In this work we report a large effect due to relativistic corrections in the electronic structure of very dilute GaAs1-xBix (x < 0.0025) thick epitaxial layers. The variation of the spin-orbit split-off band for x as small as 0.0001 is reported. Very thick (2-3 um) epilayers were grown by molecular-beam epitaxy to isolate the transitions between the conduction band and the spin-orbit split-off band from the epilayer and the substrate, using contactless electroreflectance. Thick epitaxial quality samples with precise control of the spin-orbit splitting are interesting for applications in spin-based electronics.",

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author = "Leknath Bhusel and Aaron Ptak and Ryan France and Angelo Mascarenhas",

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doi = "10.1088/0268-1242/24/3/035018",

language = "American English",

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T1 - Contactless Electroreflectance Studies of Ultra-Dilute GaAs1-xBix Alloys

T2 - Article No. 035018

AU - Bhusel, Leknath

AU - Ptak, Aaron

AU - France, Ryan

AU - Mascarenhas, Angelo

PY - 2009

Y1 - 2009

N2 - In this work we report a large effect due to relativistic corrections in the electronic structure of very dilute GaAs1-xBix (x < 0.0025) thick epitaxial layers. The variation of the spin-orbit split-off band for x as small as 0.0001 is reported. Very thick (2-3 um) epilayers were grown by molecular-beam epitaxy to isolate the transitions between the conduction band and the spin-orbit split-off band from the epilayer and the substrate, using contactless electroreflectance. Thick epitaxial quality samples with precise control of the spin-orbit splitting are interesting for applications in spin-based electronics.

AB - In this work we report a large effect due to relativistic corrections in the electronic structure of very dilute GaAs1-xBix (x < 0.0025) thick epitaxial layers. The variation of the spin-orbit split-off band for x as small as 0.0001 is reported. Very thick (2-3 um) epilayers were grown by molecular-beam epitaxy to isolate the transitions between the conduction band and the spin-orbit split-off band from the epilayer and the substrate, using contactless electroreflectance. Thick epitaxial quality samples with precise control of the spin-orbit splitting are interesting for applications in spin-based electronics.

KW - basic sciences

KW - materials science

U2 - 10.1088/0268-1242/24/3/035018

DO - 10.1088/0268-1242/24/3/035018

M3 - Article

SN - 0268-1242

VL - 24

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 3

ER -

Contactless Electroreflectance Studies of Ultra-Dilute GaAs1-xBix Alloys: Article No. 035018

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Keywords

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