Contactless Measurement of Recombination Lifetime in Photovoltaic Materials

R. K. Ahrenkiel; Steven Johnston

doi:10.1109/PVSC.1997.653939

Contactless Measurement of Recombination Lifetime in Photovoltaic Materials

R. K. Ahrenkiel, Steven Johnston

Materials Science

Research output: Contribution to conference › Paper › peer-review

4 Scopus Citations

Abstract

Contactless measurement of important semiconductor parameters has become a popular trend of current semiconductor technology. Here we will describe an improved version of radio frequency photoconductive decay (RFPCD) operating in the ultra-high frequency (UHF) region. This work will show that the improved technique is capable of measuring samples ranging in size from submicron thin films to large silicon ingots. The UHF region is an ideal compromise for volume penetration and lifetime resolution with system response of 10 ns or less.

Original language	American English
Pages	119-122
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.1997.653939
State	Published - 1997
Event	Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference - Anaheim, CA, USA Duration: 29 Sep 1997 → 3 Oct 1997

Conference

Conference	Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference
City	Anaheim, CA, USA
Period	29/09/97 → 3/10/97

Bibliographical note

For preprint version, including full text online document, see NREL/CP-530-22958

NREL Publication Number

NREL/CP-520-23488

Access to Document

10.1109/PVSC.1997.653939

Cite this

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title = "Contactless Measurement of Recombination Lifetime in Photovoltaic Materials",

abstract = "Contactless measurement of important semiconductor parameters has become a popular trend of current semiconductor technology. Here we will describe an improved version of radio frequency photoconductive decay (RFPCD) operating in the ultra-high frequency (UHF) region. This work will show that the improved technique is capable of measuring samples ranging in size from submicron thin films to large silicon ingots. The UHF region is an ideal compromise for volume penetration and lifetime resolution with system response of 10 ns or less.",

author = "Ahrenkiel, {R. K.} and Steven Johnston",

note = "For preprint version, including full text online document, see NREL/CP-530-22958; Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference ; Conference date: 29-09-1997 Through 03-10-1997",

year = "1997",

doi = "10.1109/PVSC.1997.653939",

language = "American English",

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AU - Ahrenkiel, R. K.

AU - Johnston, Steven

N1 - For preprint version, including full text online document, see NREL/CP-530-22958

PY - 1997

Y1 - 1997

N2 - Contactless measurement of important semiconductor parameters has become a popular trend of current semiconductor technology. Here we will describe an improved version of radio frequency photoconductive decay (RFPCD) operating in the ultra-high frequency (UHF) region. This work will show that the improved technique is capable of measuring samples ranging in size from submicron thin films to large silicon ingots. The UHF region is an ideal compromise for volume penetration and lifetime resolution with system response of 10 ns or less.

AB - Contactless measurement of important semiconductor parameters has become a popular trend of current semiconductor technology. Here we will describe an improved version of radio frequency photoconductive decay (RFPCD) operating in the ultra-high frequency (UHF) region. This work will show that the improved technique is capable of measuring samples ranging in size from submicron thin films to large silicon ingots. The UHF region is an ideal compromise for volume penetration and lifetime resolution with system response of 10 ns or less.

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U2 - 10.1109/PVSC.1997.653939

DO - 10.1109/PVSC.1997.653939

M3 - Paper

AN - SCOPUS:0031363770

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T2 - Proceedings of the 1997 IEEE 26th Photovoltaic Specialists Conference

Y2 - 29 September 1997 through 3 October 1997

ER -

Contactless Measurement of Recombination Lifetime in Photovoltaic Materials

Abstract

Conference

Bibliographical note

NREL Publication Number

Access to Document

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Cite this