Continuously Tunable Band Gap in GaN/AlN (0001) Superlattices via Built-In Electric Field: Article No. 155301

Research output: Contribution to journal › Article › peer-review

Original language	American English
Number of pages	5
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	81
Issue number	15
DOIs	https://doi.org/10.1103/PhysRevB.81.155301
State	Published - 2010

NLR Publication Number

@article{ca447819973f4779ad95c72c448270e0,

title = "Continuously Tunable Band Gap in GaN/AlN (0001) Superlattices via Built-In Electric Field: Article No. 155301",

keywords = "band gap, electric field, GaN/AlN, strength",

author = "Suhuai Wei",

year = "2010",

doi = "10.1103/PhysRevB.81.155301",

language = "American English",

volume = "81",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "15",

}

TY - JOUR

T1 - Continuously Tunable Band Gap in GaN/AlN (0001) Superlattices via Built-In Electric Field

T2 - Article No. 155301

AU - Wei, Suhuai

PY - 2010

Y1 - 2010

KW - band gap

KW - electric field

KW - GaN/AlN

KW - strength

U2 - 10.1103/PhysRevB.81.155301

DO - 10.1103/PhysRevB.81.155301

M3 - Article

SN - 1098-0121

VL - 81

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 15

ER -