Contributions of Bulk, Interface and Built-In Potential to the Open Circuit Voltage of a-Si:H Solar Cells

    Research output: Contribution to conferencePaper

    Abstract

    Studies have been carried out on identifying the contributions of the bulk, the p/i interface regions, and the built-in potentials, Vbi, to the open circuit voltages, Voc, of p(a-SiC:H)/I(a-Si:H)/n(..mu..c-Si:H) solar cells. The p-i-n solar cells studied have different i-layers and a variety of hydrogen treated p/i interface regions. measurements are carried out on Voc with illuminationintensities from 10-6 to 50 AM1.5 and over the temperature range from 300 to 100 deg K. Although it has not yet been possible to directly identify the contributions of the i-layers, the large contributions of different p/i interface regions have been identified and characterized. Built-in potentials were measured in a variety of cells and it was found that the Voc's at AM1.5 are not limited bythe Vbi. The significance of the results and possible directions for quantifying the mechanisms limiting Voc in these as well as other cells are discussed.
    Original languageAmerican English
    Pages683-686
    Number of pages4
    DOIs
    StatePublished - 1997
    EventTwenty Sixth IEEE Photovoltaic Specialists Conference - Anaheim, California
    Duration: 29 Sep 19973 Oct 1997

    Conference

    ConferenceTwenty Sixth IEEE Photovoltaic Specialists Conference
    CityAnaheim, California
    Period29/09/973/10/97

    Bibliographical note

    Work performed by Pennsylvania State University, University Park, Pennsylvania

    NREL Publication Number

    • NREL/CP-520-24987

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