Abstract
Studies have been carried out on identifying the contributions of the bulk, the p/i interface regions, and the built-in potentials, Vbi, to the open circuit voltages, Voc, of p(a-SiC:H)/I(a-Si:H)/n(..mu..c-Si:H) solar cells. The p-i-n solar cells studied have different i-layers and a variety of hydrogen treated p/i interface regions. measurements are carried out on Voc with illuminationintensities from 10-6 to 50 AM1.5 and over the temperature range from 300 to 100 deg K. Although it has not yet been possible to directly identify the contributions of the i-layers, the large contributions of different p/i interface regions have been identified and characterized. Built-in potentials were measured in a variety of cells and it was found that the Voc's at AM1.5 are not limited bythe Vbi. The significance of the results and possible directions for quantifying the mechanisms limiting Voc in these as well as other cells are discussed.
Original language | American English |
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Pages | 683-686 |
Number of pages | 4 |
DOIs | |
State | Published - 1997 |
Event | Twenty Sixth IEEE Photovoltaic Specialists Conference - Anaheim, California Duration: 29 Sep 1997 → 3 Oct 1997 |
Conference
Conference | Twenty Sixth IEEE Photovoltaic Specialists Conference |
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City | Anaheim, California |
Period | 29/09/97 → 3/10/97 |
Bibliographical note
Work performed by Pennsylvania State University, University Park, PennsylvaniaNREL Publication Number
- NREL/CP-520-24987