Control of Asymmetric Strain Relaxation in InGaAs Grown by Molecular-Beam Epitaxy: Article No. 103530

Aaron Ptak; Chun Sheng Jiang; S.P. Ahrenkiel

doi:10.1063/1.3361533

Control of Asymmetric Strain Relaxation in InGaAs Grown by Molecular-Beam Epitaxy: Article No. 103530

Aaron Ptak, Chun Sheng Jiang, S.P. Ahrenkiel

Research output: Contribution to journal › Article › peer-review

Original language	American English
Number of pages	7
Journal	Journal of Applied Physics
Volume	107
Issue number	10
DOIs	https://doi.org/10.1063/1.3361533
State	Published - 2010

NREL Publication Number

NREL/JA-520-46970

Keywords

epilayers
epitaxial growth
strain relaxation

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10.1063/1.3361533

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title = "Control of Asymmetric Strain Relaxation in InGaAs Grown by Molecular-Beam Epitaxy: Article No. 103530",

keywords = "epilayers, epitaxial growth, strain relaxation",

author = "Aaron Ptak and Jiang, \{Chun Sheng\} and S.P. Ahrenkiel",

year = "2010",

doi = "10.1063/1.3361533",

language = "American English",

volume = "107",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "10",

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T1 - Control of Asymmetric Strain Relaxation in InGaAs Grown by Molecular-Beam Epitaxy

T2 - Article No. 103530

AU - Ptak, Aaron

AU - Jiang, Chun Sheng

AU - Ahrenkiel, S.P.

PY - 2010

Y1 - 2010

KW - epilayers

KW - epitaxial growth

KW - strain relaxation

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U2 - 10.1063/1.3361533

DO - 10.1063/1.3361533

M3 - Article

SN - 0021-8979

VL - 107

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10

ER -

Control of Asymmetric Strain Relaxation in InGaAs Grown by Molecular-Beam Epitaxy: Article No. 103530

NREL Publication Number

Keywords

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