Control of Asymmetric Strain Relaxation in InGaAs Grown by Molecular-Beam Epitaxy

R. France, A. J. Ptak, C. S. Jiang, S. P. Ahrenkiel

Research output: Contribution to journalArticlepeer-review

16 Scopus Citations

Fingerprint

Dive into the research topics of 'Control of Asymmetric Strain Relaxation in InGaAs Grown by Molecular-Beam Epitaxy'. Together they form a unique fingerprint.

Material Science