Control of Conduction Type in Al- and N-codoped ZnO Thin Films

G. D. Yuan; Z. Z. Ye; L. P. Zhu; Q. Qian; B. H. Zhao; R. X. Fan; Craig L. Perkins; S. B. Zhang

doi:10.1063/1.1928318

Control of Conduction Type in Al- and N-codoped ZnO Thin Films

G. D. Yuan, Z. Z. Ye, L. P. Zhu, Q. Qian, B. H. Zhao, R. X. Fan, Craig L. Perkins, S. B. Zhang

Materials Science

Research output: Contribution to journal › Article › peer-review

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Abstract

p -type ZnO thin films have been fabricated by an Al- and N-codoping technique at the growth temperature between 380 and 480 °C, as identified by the Hall measurement. At lower and higher temperatures, however, the samples are n type. The best p -type sample shows a resistivity and hole concentration of 24.5 Ωcm and 7.48×1017 cm-3 at room temperature, respectively. Spread resistance depth profile further shows the transition from n -type substrate to p -type ZnO through a clearly defined depletion region. Photoluminescence spectra also show low signal in deep level transition, indicating a low density of native defects.

Original language	American English
Article number	202106
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	20
DOIs	https://doi.org/10.1063/1.1928318 https://doi.org/10.1063/1.1928318
State	Published - 16 May 2005

NREL Publication Number

NREL/JA-520-38796

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title = "Control of Conduction Type in Al- and N-codoped ZnO Thin Films",

abstract = "p -type ZnO thin films have been fabricated by an Al- and N-codoping technique at the growth temperature between 380 and 480 °C, as identified by the Hall measurement. At lower and higher temperatures, however, the samples are n type. The best p -type sample shows a resistivity and hole concentration of 24.5 Ωcm and 7.48×1017 cm-3 at room temperature, respectively. Spread resistance depth profile further shows the transition from n -type substrate to p -type ZnO through a clearly defined depletion region. Photoluminescence spectra also show low signal in deep level transition, indicating a low density of native defects.",

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AU - Yuan, G. D.

AU - Ye, Z. Z.

AU - Zhu, L. P.

AU - Qian, Q.

AU - Zhao, B. H.

AU - Fan, R. X.

AU - Perkins, Craig L.

AU - Zhang, S. B.

PY - 2005/5/16

Y1 - 2005/5/16

N2 - p -type ZnO thin films have been fabricated by an Al- and N-codoping technique at the growth temperature between 380 and 480 °C, as identified by the Hall measurement. At lower and higher temperatures, however, the samples are n type. The best p -type sample shows a resistivity and hole concentration of 24.5 Ωcm and 7.48×1017 cm-3 at room temperature, respectively. Spread resistance depth profile further shows the transition from n -type substrate to p -type ZnO through a clearly defined depletion region. Photoluminescence spectra also show low signal in deep level transition, indicating a low density of native defects.

AB - p -type ZnO thin films have been fabricated by an Al- and N-codoping technique at the growth temperature between 380 and 480 °C, as identified by the Hall measurement. At lower and higher temperatures, however, the samples are n type. The best p -type sample shows a resistivity and hole concentration of 24.5 Ωcm and 7.48×1017 cm-3 at room temperature, respectively. Spread resistance depth profile further shows the transition from n -type substrate to p -type ZnO through a clearly defined depletion region. Photoluminescence spectra also show low signal in deep level transition, indicating a low density of native defects.

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M3 - Article

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ER -

Control of Conduction Type in Al- and N-codoped ZnO Thin Films

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