Control of Conduction Type in Al- and N-codoped ZnO Thin Films

G. D. Yuan, Z. Z. Ye, L. P. Zhu, Q. Qian, B. H. Zhao, R. X. Fan, Craig L. Perkins, S. B. Zhang

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Abstract

p -type ZnO thin films have been fabricated by an Al- and N-codoping technique at the growth temperature between 380 and 480 °C, as identified by the Hall measurement. At lower and higher temperatures, however, the samples are n type. The best p -type sample shows a resistivity and hole concentration of 24.5 Ωcm and 7.48×1017 cm-3 at room temperature, respectively. Spread resistance depth profile further shows the transition from n -type substrate to p -type ZnO through a clearly defined depletion region. Photoluminescence spectra also show low signal in deep level transition, indicating a low density of native defects.

Original languageAmerican English
Article number202106
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number20
DOIs
StatePublished - 16 May 2005

NREL Publication Number

  • NREL/JA-520-38796

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