Control of CuPt Ordering in GaInP Grown by Hydride Vapor Phase Epitaxy

Kevin L. Schulte, David R. Diercks, Dennice M. Roberts, John Simon, Corinne E. Packard, Pat Dippo, Aaron J. Ptak

Research output: Contribution to conferencePaperpeer-review


We investigate the degree of ordering present in GaInP layers grown by dynamic hydride vapor phase epitaxy (D-HVPE) as a function of various growth conditions. We assess order parameter from both transmission electron and x-ray diffraction and compare these trends to the order parameter estimated by the photoluminescence-determined band gap in the GaInP layers. The degree of ordering increases with deposition temperature and the ratio of gas-phase group V to group III precursors in the reactor. We also investigate the effect of growth rate, demonstrating the capability of HVPE to suppress order through rapid growth rates. Such ordering dependences are consistent with mechanisms established for ordering observed in GaInP grown by organometallic vapor phase epitaxy (OMVPE), but with weaker ordering than GaInP grown by that method.

Original languageAmerican English
Number of pages3
StatePublished - 14 Jun 2020
Externally publishedYes
Event47th IEEE Photovoltaic Specialists Conference, PVSC 2020 - Calgary, Canada
Duration: 15 Jun 202021 Aug 2020


Conference47th IEEE Photovoltaic Specialists Conference, PVSC 2020

Bibliographical note

Publisher Copyright:
© 2020 IEEE.

NREL Publication Number

  • NREL/CP-5900-75946


  • growth
  • HVPE
  • III-V
  • ordering


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