Control of Ferromagnetism via Electron Doping in In2O3:Cr

Hannes Raebiger, Stephan Lany, Alex Zunger

Research output: Contribution to journalArticlepeer-review

72 Scopus Citations


Carrier-induced ferromagnetism in wide-gap transparent conductive oxides has been widely discussed and debated, leading to confusion and skepticism regarding whether dilute magnetic oxides exist at all. We show from density-functional calculations within a band-gap corrected approach that ferromagnetic Cr-Cr coupling can be switched on and off via electron doping in the wide-gap transparent n-type conductive oxide In2O3. We show that (i) Cr does not produce in In2O3 any free electrons and renders the system an insulating paramagnet. (ii) Extrinsic n-type doping of In2O3: Cr via Sn produces free electrons, whose concentration is controllable via the oxygen partial pressure. Such additional carriers stabilize a strong long-range Cr-Cr ferromagnetic coupling.

Original languageAmerican English
Article numberArticle No. 027203
Number of pages4
JournalPhysical Review Letters
Issue number2
StatePublished - 7 Jul 2008

NREL Publication Number

  • NREL/JA-2A0-43070


  • crystal band structure
  • transparent conductive oxides


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