Abstract
Carrier-induced ferromagnetism in wide-gap transparent conductive oxides has been widely discussed and debated, leading to confusion and skepticism regarding whether dilute magnetic oxides exist at all. We show from density-functional calculations within a band-gap corrected approach that ferromagnetic Cr-Cr coupling can be switched on and off via electron doping in the wide-gap transparent n-type conductive oxide In2O3. We show that (i) Cr does not produce in In2O3 any free electrons and renders the system an insulating paramagnet. (ii) Extrinsic n-type doping of In2O3: Cr via Sn produces free electrons, whose concentration is controllable via the oxygen partial pressure. Such additional carriers stabilize a strong long-range Cr-Cr ferromagnetic coupling.
| Original language | American English |
|---|---|
| Article number | Article No. 027203 |
| Number of pages | 4 |
| Journal | Physical Review Letters |
| Volume | 101 |
| Issue number | 2 |
| DOIs | |
| State | Published - 7 Jul 2008 |
NREL Publication Number
- NREL/JA-2A0-43070
Keywords
- crystal band structure
- transparent conductive oxides