Controlled Dielectric Breakdown to Form Pinhole Passivated Contacts

David Young, William Nemeth, Caroline Lima Salles, Pauls Stradins

Research output: NRELPoster


This contribution explores a low-temperature route to forming dielectric pinholes to form poly-Si/dielectric/c-Si passivated contacts. The method utilizes controlled dielectric breakdown to form nanoscale pinholes in a thick (non-tunnelling) dielectric which, when annealed, allows dopant atoms to pass from doped poly-Si through the dielectric and into the c-Si wafer forming conductive pathways. We show that the pinholes can be repassivated with dopants and H diffusion which results in increased PL signals after processing. The method can be expanded to optimized dielectric passivation stacks (not just a single layer) and can be formed in parallel over the faces of the wafer in selected areas (only under the grid).
Original languageAmerican English
StatePublished - 2022

Publication series

NamePresented at the 12th International Conference on Crystalline Silicon Photovoltaic (SiliconPV 2022), 28 March - 1 April 2022, Konstanz, Germany

NREL Publication Number

  • NREL/PO-5900-82427


  • controlled dielectric breakdown
  • dielectric pinholes
  • passivated contact
  • photovoltaic
  • PV
  • Si
  • silicon


Dive into the research topics of 'Controlled Dielectric Breakdown to Form Pinhole Passivated Contacts'. Together they form a unique fingerprint.

Cite this