Controlled Formation of GaAs pn Junctions During Hydride Vapor Phase Epitaxy of GaAs

Robert Reedy; Aaron Ptak; David Young; William Rance; Kevin Schulte; Thomas Kuech

doi:10.1016/j.jcrysgro.2011.11.013

Controlled Formation of GaAs pn Junctions During Hydride Vapor Phase Epitaxy of GaAs

Robert Reedy, Aaron Ptak, David Young, William Rance, Kevin Schulte, Thomas Kuech

Research output: Contribution to journal › Article › peer-review

Original language	American English
Pages (from-to)	253-257
Number of pages	5
Journal	Journal of Crystal Growth
Volume	352
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2011.11.013
State	Published - 2012

NREL Publication Number

NREL/JA-5200-56281

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10.1016/j.jcrysgro.2011.11.013

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@article{b02d0d4bcfcd46adbb38085100512a78,

title = "Controlled Formation of GaAs pn Junctions During Hydride Vapor Phase Epitaxy of GaAs",

author = "Robert Reedy and Aaron Ptak and David Young and William Rance and Kevin Schulte and Thomas Kuech",

year = "2012",

doi = "10.1016/j.jcrysgro.2011.11.013",

language = "American English",

volume = "352",

pages = "253--257",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "1",

}

TY - JOUR

T1 - Controlled Formation of GaAs pn Junctions During Hydride Vapor Phase Epitaxy of GaAs

AU - Reedy, Robert

AU - Ptak, Aaron

AU - Young, David

AU - Rance, William

AU - Schulte, Kevin

AU - Kuech, Thomas

PY - 2012

Y1 - 2012

UR - http://www.scopus.com/inward/record.url?scp=84863335428&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2011.11.013

DO - 10.1016/j.jcrysgro.2011.11.013

M3 - Article

SN - 0022-0248

VL - 352

SP - 253

EP - 257

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

ER -

Controlled Formation of GaAs pn Junctions During Hydride Vapor Phase Epitaxy of GaAs

NREL Publication Number

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