Controlled Grain Size and Location in Ge Thin Films on Silicon Dioxide by Low Temperature Selective Solid Phase Crystallization

    Research output: Contribution to conferencePaper

    Abstract

    Selective solid phase crystallization for control of grain size and location in polycrystalline thin Ge films on amorphous silicon dioxide substrates is described. The approach consists of selective solid phase crystal nucleation via an alloy reaction at predefined nucleation sites, which consist of metal islands deposited on top of the amorphous Ge film, followed by lateral solid phase epitaxialgrowth.
    Original languageAmerican English
    Pages113-118
    Number of pages6
    StatePublished - 1996
    EventMaterials Research Society Symposium - Boston, Massachusetts
    Duration: 27 Nov 19951 Dec 1995

    Conference

    ConferenceMaterials Research Society Symposium
    CityBoston, Massachusetts
    Period27/11/951/12/95

    Bibliographical note

    Work performed by the California Institute of Technology, Pasadena, California

    NREL Publication Number

    • NREL/CP-22310

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