Abstract
Selective solid phase crystallization for control of grain size and location in polycrystalline thin Ge films on amorphous silicon dioxide substrates is described. The approach consists of selective solid phase crystal nucleation via an alloy reaction at predefined nucleation sites, which consist of metal islands deposited on top of the amorphous Ge film, followed by lateral solid phase epitaxialgrowth.
Original language | American English |
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Pages | 113-118 |
Number of pages | 6 |
State | Published - 1996 |
Event | Materials Research Society Symposium - Boston, Massachusetts Duration: 27 Nov 1995 → 1 Dec 1995 |
Conference
Conference | Materials Research Society Symposium |
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City | Boston, Massachusetts |
Period | 27/11/95 → 1/12/95 |
Bibliographical note
Work performed by the California Institute of Technology, Pasadena, CaliforniaNREL Publication Number
- NREL/CP-22310