Controlling Dopant Profiles in Hyperdoped Silicon by Modifying Dopant Evaporation Rates During Pulsed Laser Melting: Article No. 112112

Robert Reedy Jr.

Research output: Contribution to journalArticlepeer-review

Original languageAmerican English
Number of pages3
JournalApplied Physics Letters
Volume100
Issue number11
DOIs
StatePublished - 2012

NREL Publication Number

  • NREL/JA-5200-55330

Keywords

  • hyperdoped
  • ion implantation
  • pulsed laser melting

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