Controlling Doping in Graphene Through a SiC Substrate: a First-Principles Study: Article No. 161405(R)

Research output: Contribution to journal › Article › peer-review

Original language	American English
Number of pages	4
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	83
Issue number	16
DOIs	https://doi.org/10.1103/PhysRevB.83.161405
State	Published - 2011

NLR Publication Number

@article{7573e6c645fc4d44be39c789ad861763,

title = "Controlling Doping in Graphene Through a SiC Substrate: a First-Principles Study: Article No. 161405(R)",

keywords = "charge carriers, graphene",

author = "Bing Huang and Su-Huai Wei and Hongjun Xiang",

year = "2011",

doi = "10.1103/PhysRevB.83.161405",

language = "American English",

volume = "83",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "16",

}

TY - JOUR

T1 - Controlling Doping in Graphene Through a SiC Substrate: a First-Principles Study

T2 - Article No. 161405(R)

AU - Huang, Bing

AU - Wei, Su-Huai

AU - Xiang, Hongjun

PY - 2011

Y1 - 2011

KW - charge carriers

KW - graphene

U2 - 10.1103/PhysRevB.83.161405

DO - 10.1103/PhysRevB.83.161405

M3 - Article

SN - 1098-0121

VL - 83

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 16

ER -