Controlling Pinhole Radius and Areal Density in a-Si/SiOx Using Metal-Assisted Chemical Etching: Paper No. 020011

Caroline Lima Salles, William Nemeth, Harvey Guthrey, Sumit Agarwal, Pauls Stradins

Research output: Contribution to conferencePaper

1 Scopus Citations

Abstract

Polysilicon on silicon oxide (poly-Si/SiOx) passivating contacts with predominant charge-carrier transport via pinholes are currently prepared via a>1000 degrees C thermal step to induce oxide break-up. Herein, we develop the precursor of a pinhole-enabled poly-Si/SiOx contact utilizing room temperature metal-assisted chemical etching (MACE) to form pinholes in the SiOx. The pinholes were created via electroless Ag nanoparticle (Ag NP) deposition followed by the MACE of intrinsic amorphous hydrogenated silicon (a-Si:H) on SiOx, creating isolated mesopores through the film stack. By varying the MACE etching solution (HF:H2O2) concentration, we were able to vary the pinhole areal density over four orders of magnitude (104-107 cm-2). We observed the Ostwald ripening of the Ag NP to enable control over the pinhole radii. Our work demonstrates proof-of-concept for a-Si:H/SiOx with mesopores across the film stack, which may serve as precursor for the development of poly-Si/SiOx passivating contacts of both polarities.
Original languageAmerican English
Number of pages4
DOIs
StatePublished - 2022
EventSiliconPV 2021: The 11th International Conference on Crystalline Silicon Photovoltaics - Hamelin, Germany
Duration: 19 Apr 202123 Apr 2021

Conference

ConferenceSiliconPV 2021: The 11th International Conference on Crystalline Silicon Photovoltaics
CityHamelin, Germany
Period19/04/2123/04/21

NREL Publication Number

  • NREL/CP-5900-79903

Keywords

  • metal assisted chemical etching
  • Ostwald ripening
  • passivating contact
  • photovoltaic
  • pinholes
  • poly Si/SiOx
  • PV

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