Controlling the Stoichiometry and Doping of Semiconductor Materials

David Albin; Wyatt Metzger; Joel Duenow; Stuart Farrell; Eric Colegrove; James Burst

Controlling the Stoichiometry and Doping of Semiconductor Materials

David Albin (Inventor), Wyatt Metzger (Inventor), Joel Duenow (Inventor), Stuart Farrell (Inventor), Eric Colegrove (Inventor), James Burst (Inventor)

Materials Science

Research output: Patent

Abstract

Methods for treating a semiconductor material are provided. According to an aspect of the invention, the method includes annealing the semiconductor material in the presence of a compound that includes a first element and a second element. The first element provides an overpressure to achieve a desired stoichiometry of the semiconductor material, and the second element provides a dopant to the semiconductor material.

Original language	American English
Patent number	9,419,170 B2
Filing date	16/08/16
State	Published - 2016

NREL Publication Number

NREL/PT-5K00-67208

Keywords

dopants
semiconductor materials
stoichiometry

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Cite this

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title = "Controlling the Stoichiometry and Doping of Semiconductor Materials",

abstract = "Methods for treating a semiconductor material are provided. According to an aspect of the invention, the method includes annealing the semiconductor material in the presence of a compound that includes a first element and a second element. The first element provides an overpressure to achieve a desired stoichiometry of the semiconductor material, and the second element provides a dopant to the semiconductor material.",

keywords = "dopants, semiconductor materials, stoichiometry",

author = "David Albin and Wyatt Metzger and Joel Duenow and Stuart Farrell and Eric Colegrove and James Burst",

year = "2016",

language = "American English",

type = "Patent",

note = "9,419,170 B2",

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TY - PAT

T1 - Controlling the Stoichiometry and Doping of Semiconductor Materials

AU - Albin, David

AU - Metzger, Wyatt

AU - Duenow, Joel

AU - Farrell, Stuart

AU - Colegrove, Eric

AU - Burst, James

PY - 2016

Y1 - 2016

N2 - Methods for treating a semiconductor material are provided. According to an aspect of the invention, the method includes annealing the semiconductor material in the presence of a compound that includes a first element and a second element. The first element provides an overpressure to achieve a desired stoichiometry of the semiconductor material, and the second element provides a dopant to the semiconductor material.

AB - Methods for treating a semiconductor material are provided. According to an aspect of the invention, the method includes annealing the semiconductor material in the presence of a compound that includes a first element and a second element. The first element provides an overpressure to achieve a desired stoichiometry of the semiconductor material, and the second element provides a dopant to the semiconductor material.

KW - dopants

KW - semiconductor materials

KW - stoichiometry

M3 - Patent

M1 - 9,419,170 B2

Y2 - 2016/08/16

ER -

Controlling the Stoichiometry and Doping of Semiconductor Materials

Abstract

NREL Publication Number

Keywords

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Cite this