Controlling the Stoichiometry and Doping of Semiconductor Materials

David Albin (Inventor), Wyatt Metzger (Inventor), Joel Duenow (Inventor), Stuart Farrell (Inventor), Eric Colegrove (Inventor), James Burst (Inventor)

Research output: Patent


Methods for treating a semiconductor material are provided. According to an aspect of the invention, the method includes annealing the semiconductor material in the presence of a compound that includes a first element and a second element. The first element provides an overpressure to achieve a desired stoichiometry of the semiconductor material, and the second element provides a dopant to the semiconductor material.
Original languageAmerican English
Patent number9,419,170 B2
Filing date16/08/16
StatePublished - 2016

NREL Publication Number

  • NREL/PT-5K00-67208


  • dopants
  • semiconductor materials
  • stoichiometry


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