Correlating Defect Band Luminesce to Elemental Distribution by X-Ray Fluorescence

Steven Johnston, Mowafak Al-Jassim, M.I. Bertoni, S. Bernardini, B. Lai

Research output: Contribution to conferencePaperpeer-review


Photoluminescence (PL) imaging is a widely accepted tool to characterize the quality of multicrystalline and monocrystalline silicon cells. Recently a set of neighboring multicrystalline silicon wafers taken from a cell production line at different stages of processing have shown an unexpected PL trend. Band-to-band PL (BPL) and sub-bandgap PL (subPL), where collected for the entire silicon wafers. Interestingly, a reversal of the subPL intensity in various regions of the wafer is observed right after the deposition of the anti-reflective coating (ARC). Regions with low subPL intensity before ARC exhibit high subPL intensity afterwards, and the opposite holds true for other regions of the wafer. Some authors have performed high-resolution cathodoluminesce spectroscopy, EBIC and dark lock-in-thermography to elucidate the origin of this phenomenon, In this work we present the results of the nanoscale X-ray fluorescence imaging at the points of subPL reversal to evaluate the role of metal decoration on this uncommon behavior and we complement it with our previous findings on the distribution of impurities during cell processing.

Original languageAmerican English
Number of pages3
StatePublished - 15 Oct 2014
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: 8 Jun 201413 Jun 2014


Conference40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country/TerritoryUnited States

Bibliographical note

Publisher Copyright:
© 2014 IEEE.

NREL Publication Number

  • NREL/CP-5J00-63532


  • multicrystalline silicon
  • Photoluminescence
  • PL band reversal
  • sub-band PL
  • X-ray fluorescence


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