Correlation Between Measured Minority-Carrier Lifetime and Cu(In,Ga)Se2 Device Performance

Ingrid L. Repins, Wyatt K. Metzger, Craig L. Perkins, Jian V. Li, Miguel A. Contreras

Research output: Contribution to journalArticlepeer-review

45 Scopus Citations

Abstract

The relationship between lifetime measured by time-resolved photoluminescence on bare Cu(In, Ga)Se2 films and subsequent device performance is examined. Devices and films from both the laboratory and a 40-MW manufacturing line are examined. A correlation between the device voltage and lifetime is demonstrated. The effects of the measured band gap and carrier density are discussed. A method to account for the effects of varying band-gap and carrier density profiles, without requiring computer modeling, is presented. Results are compared with fundamental calculations.

Original languageAmerican English
Article number5560786
Pages (from-to)2957-2963
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume57
Issue number11
DOIs
StatePublished - Nov 2010

NREL Publication Number

  • NREL/JA-520-47305

Keywords

  • Charge carrier lifetime
  • photovoltaic cell materials
  • photovoltaic cell measurements
  • thin-film devices

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