Correlation between the Electronic Structures and Diffusion Paths of Interstitial Defects in Semiconductors: The Case of CdTe: Article No. 155208

Suhuai Wei; Jihui Yang; Juarez Da Silva

doi:10.1103/PhysRevB.90.155208

Correlation between the Electronic Structures and Diffusion Paths of Interstitial Defects in Semiconductors: The Case of CdTe: Article No. 155208

Suhuai Wei, Jihui Yang, Juarez Da Silva

Materials Science

University of Sao Paulo

Research output: Contribution to journal › Article › peer-review

Original language	American English
Number of pages	7
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	90
Issue number	15
DOIs	https://doi.org/10.1103/PhysRevB.90.155208
State	Published - 2014

NREL Publication Number

NREL/JA-5K00-63513

Access to Document

10.1103/PhysRevB.90.155208

Cite this

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title = "Correlation between the Electronic Structures and Diffusion Paths of Interstitial Defects in Semiconductors: The Case of CdTe: Article No. 155208",

author = "Suhuai Wei and Jihui Yang and {Da Silva}, Juarez",

year = "2014",

doi = "10.1103/PhysRevB.90.155208",

language = "American English",

volume = "90",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "15",

}

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AU - Yang, Jihui

AU - Da Silva, Juarez

PY - 2014

Y1 - 2014

U2 - 10.1103/PhysRevB.90.155208

DO - 10.1103/PhysRevB.90.155208

M3 - Article

SN - 1098-0121

VL - 90

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 15

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