Abstract
A four-junction GaInP/GaAs/GaInAsN/Ge solar cell should be able to reach 40% efficiency if each of the junctions can be made with a quality similar to that demonstrated for GaAs. However, the GaInAsN subcell has shown poor performance. Deep-level transient spectroscopy (DLTS) can elucidate recombination centers in a material and could help identify the problem with the GaInAsN. So far, DLTSstudies of GaInAsN have shown many peaks. In this paper we compare the performance of the GaInAsN solar cells with the DLTS spectra to identify which DLTS peak is correlated with the device performance.
| Original language | American English |
|---|---|
| Number of pages | 5 |
| State | Published - 2005 |
| Event | 2004 DOE Solar Energy Technologies Program Review Meeting - Denver, Colorado Duration: 25 Oct 2004 → 28 Oct 2004 |
Conference
| Conference | 2004 DOE Solar Energy Technologies Program Review Meeting |
|---|---|
| City | Denver, Colorado |
| Period | 25/10/04 → 28/10/04 |
Bibliographical note
Presented at the 2004 DOE Solar Energy Technologies Program Review Meeting, 25-28 October 2004, Denver, Colorado. Also included in the proceedings available on CD-ROM (DOE/GO-102005-2067; NREL/CD-520-37140)NREL Publication Number
- NREL/CP-520-36972
Keywords
- deep level transient spectroscopy (DLTS)
- device performance
- open-circuit voltage (VOC)
- photocurrent
- PV
- solar cells