Correlation of Nitrogen Related Traps in InGaAsN with Solar Cell Properties

Aurangzeb Khan; Sarah R. Kurtz; S. Prasad; S. W. Johnston; Jihua Gou

doi:10.1063/1.2747664

Correlation of Nitrogen Related Traps in InGaAsN with Solar Cell Properties

Aurangzeb Khan, Sarah R. Kurtz, S. Prasad, S. W. Johnston, Jihua Gou

Materials Science

University of South Alabama

Research output: Contribution to journal › Article › peer-review

47 Scopus Citations

Abstract

The thermal annealing of nitrogen related traps in p -type InGaAsN and GaAsN is investigated by deep level transient spectroscopy (DLTS). Upon annealing, an apparent recovery of the photovoltaic properties correlates with changes in the DLTS data observed for InGaAsN and GaAsN diodes and solar cells, revealing that a nitrogen related E1 (EC -0.20 eV) center has an important role in governing the solar cell performance. The large electron capture cross section (∼8.9× 10-15 cm2) of this center indicates that this defect may act as an efficient recombination center. Therefore, its complete removal by annealing or by some other process is essential for the high performance of GaInAsN solar cells. The internal quantum efficiency data were modeled to quantify the change in material properties associated with this improvement upon annealing. Annealed cells with indium impurity (InGaAsN) show a slightly higher photoresponse, which could be due to low scattering caused by In-N pair formation after annealing.

Original language	American English
Article number	Article No. 243509
Number of pages	3
Journal	Applied Physics Letters
Volume	90
Issue number	24
DOIs	https://doi.org/10.1063/1.2747664 https://doi.org/10.1063/1.2747664
State	Published - 2007

NREL Publication Number

NREL/JA-520-41133

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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title = "Correlation of Nitrogen Related Traps in InGaAsN with Solar Cell Properties",

abstract = "The thermal annealing of nitrogen related traps in p -type InGaAsN and GaAsN is investigated by deep level transient spectroscopy (DLTS). Upon annealing, an apparent recovery of the photovoltaic properties correlates with changes in the DLTS data observed for InGaAsN and GaAsN diodes and solar cells, revealing that a nitrogen related E1 (EC -0.20 eV) center has an important role in governing the solar cell performance. The large electron capture cross section (∼8.9× 10-15 cm2) of this center indicates that this defect may act as an efficient recombination center. Therefore, its complete removal by annealing or by some other process is essential for the high performance of GaInAsN solar cells. The internal quantum efficiency data were modeled to quantify the change in material properties associated with this improvement upon annealing. Annealed cells with indium impurity (InGaAsN) show a slightly higher photoresponse, which could be due to low scattering caused by In-N pair formation after annealing.",

author = "Aurangzeb Khan and Kurtz, {Sarah R.} and S. Prasad and Johnston, {S. W.} and Jihua Gou",

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AU - Khan, Aurangzeb

AU - Kurtz, Sarah R.

AU - Prasad, S.

AU - Johnston, S. W.

AU - Gou, Jihua

PY - 2007

Y1 - 2007

N2 - The thermal annealing of nitrogen related traps in p -type InGaAsN and GaAsN is investigated by deep level transient spectroscopy (DLTS). Upon annealing, an apparent recovery of the photovoltaic properties correlates with changes in the DLTS data observed for InGaAsN and GaAsN diodes and solar cells, revealing that a nitrogen related E1 (EC -0.20 eV) center has an important role in governing the solar cell performance. The large electron capture cross section (∼8.9× 10-15 cm2) of this center indicates that this defect may act as an efficient recombination center. Therefore, its complete removal by annealing or by some other process is essential for the high performance of GaInAsN solar cells. The internal quantum efficiency data were modeled to quantify the change in material properties associated with this improvement upon annealing. Annealed cells with indium impurity (InGaAsN) show a slightly higher photoresponse, which could be due to low scattering caused by In-N pair formation after annealing.

AB - The thermal annealing of nitrogen related traps in p -type InGaAsN and GaAsN is investigated by deep level transient spectroscopy (DLTS). Upon annealing, an apparent recovery of the photovoltaic properties correlates with changes in the DLTS data observed for InGaAsN and GaAsN diodes and solar cells, revealing that a nitrogen related E1 (EC -0.20 eV) center has an important role in governing the solar cell performance. The large electron capture cross section (∼8.9× 10-15 cm2) of this center indicates that this defect may act as an efficient recombination center. Therefore, its complete removal by annealing or by some other process is essential for the high performance of GaInAsN solar cells. The internal quantum efficiency data were modeled to quantify the change in material properties associated with this improvement upon annealing. Annealed cells with indium impurity (InGaAsN) show a slightly higher photoresponse, which could be due to low scattering caused by In-N pair formation after annealing.

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Correlation of Nitrogen Related Traps in InGaAsN with Solar Cell Properties

Abstract

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UN SDGs

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