Correlation of Photoluminescence Linewidths with Carrier Concentration in p-Ga0.52In0.48P

D. J. Arent, M. W. Peterson, C. Kramer, K. A. Bertness, J. A. Turner

Research output: Contribution to journalArticlepeer-review

2 Scopus Citations


We find a statistically significant correlation between carrier concentration and the Lorentzian linewidth factor determined from a Voigt lineshape fit to roomtemperature photoluminscence (PL) measurements for partially ordered p-Ga0.52In0.48P epitaxially deposited by organometallic vapor-phase deposition on GaAs. The correlation is independent of the amount of ordering present in the material. For carrier concentrations over the range of ≃1016 to 1019 cm-3, PL provides rapid and nondestructive evaluation, with increasing accuracy above carrier concentration levels of 5 × 1017 cm-3.

Original languageAmerican English
Pages (from-to)1633-1636
Number of pages4
JournalJournal of Electronic Materials
Issue number10
StatePublished - 1996

NREL Publication Number

  • NREL/JA-411-20781


  • Carrier concentration
  • Gallium indium phosphide
  • Nondestructive characterization
  • Photoluminescence


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