Correlation of Photoluminescence Linewidths with Carrier Concentration in p-Ga0.52In0.48P

D. J. Arent; M. W. Peterson; C. Kramer; K. A. Bertness; J. A. Turner

doi:10.1007/BF02655588

Correlation of Photoluminescence Linewidths with Carrier Concentration in p-Ga0.52In0.48P

D. J. Arent
, M. W. Peterson
, C. Kramer
, K. A. Bertness
, J. A. Turner

Research output: Contribution to journal › Article › peer-review

2 Scopus Citations

Abstract

We find a statistically significant correlation between carrier concentration and the Lorentzian linewidth factor determined from a Voigt lineshape fit to roomtemperature photoluminscence (PL) measurements for partially ordered p-Ga_0.52In_0.48P epitaxially deposited by organometallic vapor-phase deposition on GaAs. The correlation is independent of the amount of ordering present in the material. For carrier concentrations over the range of ≃10¹⁶ to 10¹⁹ cm^-3, PL provides rapid and nondestructive evaluation, with increasing accuracy above carrier concentration levels of 5 × 10¹⁷ cm^-3.

Original language	American English
Pages (from-to)	1633-1636
Number of pages	4
Journal	Journal of Electronic Materials
Volume	25
Issue number	10
DOIs	https://doi.org/10.1007/BF02655588 https://doi.org/10.1007/BF02655588
State	Published - 1996

NLR Publication Number

NREL/JA-411-20781

Keywords

Carrier concentration
Gallium indium phosphide
Nondestructive characterization
Photoluminescence

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@article{50b555f92a3f452582a0d00730d9974e,

title = "Correlation of Photoluminescence Linewidths with Carrier Concentration in p-Ga0.52In0.48P",

abstract = "We find a statistically significant correlation between carrier concentration and the Lorentzian linewidth factor determined from a Voigt lineshape fit to roomtemperature photoluminscence (PL) measurements for partially ordered p-Ga0.52In0.48P epitaxially deposited by organometallic vapor-phase deposition on GaAs. The correlation is independent of the amount of ordering present in the material. For carrier concentrations over the range of ≃1016 to 1019 cm-3, PL provides rapid and nondestructive evaluation, with increasing accuracy above carrier concentration levels of 5 × 1017 cm-3.",

keywords = "Carrier concentration, Gallium indium phosphide, Nondestructive characterization, Photoluminescence",

author = "Arent, \{D. J.\} and Peterson, \{M. W.\} and C. Kramer and Bertness, \{K. A.\} and Turner, \{J. A.\}",

year = "1996",

doi = "10.1007/BF02655588",

language = "American English",

volume = "25",

pages = "1633--1636",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "10",

}

TY - JOUR

T1 - Correlation of Photoluminescence Linewidths with Carrier Concentration in p-Ga0.52In0.48P

AU - Arent, D. J.

AU - Peterson, M. W.

AU - Kramer, C.

AU - Bertness, K. A.

AU - Turner, J. A.

PY - 1996

Y1 - 1996

N2 - We find a statistically significant correlation between carrier concentration and the Lorentzian linewidth factor determined from a Voigt lineshape fit to roomtemperature photoluminscence (PL) measurements for partially ordered p-Ga0.52In0.48P epitaxially deposited by organometallic vapor-phase deposition on GaAs. The correlation is independent of the amount of ordering present in the material. For carrier concentrations over the range of ≃1016 to 1019 cm-3, PL provides rapid and nondestructive evaluation, with increasing accuracy above carrier concentration levels of 5 × 1017 cm-3.

AB - We find a statistically significant correlation between carrier concentration and the Lorentzian linewidth factor determined from a Voigt lineshape fit to roomtemperature photoluminscence (PL) measurements for partially ordered p-Ga0.52In0.48P epitaxially deposited by organometallic vapor-phase deposition on GaAs. The correlation is independent of the amount of ordering present in the material. For carrier concentrations over the range of ≃1016 to 1019 cm-3, PL provides rapid and nondestructive evaluation, with increasing accuracy above carrier concentration levels of 5 × 1017 cm-3.

KW - Carrier concentration

KW - Gallium indium phosphide

KW - Nondestructive characterization

KW - Photoluminescence

UR - https://www.scopus.com/pages/publications/0342441831

U2 - 10.1007/BF02655588

DO - 10.1007/BF02655588

M3 - Article

AN - SCOPUS:0342441831

SN - 0361-5235

VL - 25

SP - 1633

EP - 1636

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 10

ER -

Correlation of Photoluminescence Linewidths with Carrier Concentration in p-Ga0.52In0.48P

Abstract

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Keywords

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