Correlation of Polycrystalline Cu(In,Ga)Se2 Device Efficiency with Homojunction Depth and Interfacial Structure: X-Ray Photoemission and Positron Annihilation Spectroscopic Characterization

    Research output: NRELTechnical Report

    Original languageAmerican English
    Number of pages4
    StatePublished - 1994

    NREL Publication Number

    • NREL/TP-412-6836

    Other Report Number

    • BNL-60422; CONF-941203-1

    Cite this