Correlation of Stress with Light-Induced Defects in Hydrogenated Amorphous Silicon Films

Sarah R. Kurtz; Y. Simon Tsuo; Raphael Tsu

doi:10.1063/1.97493

Correlation of Stress with Light-Induced Defects in Hydrogenated Amorphous Silicon Films

Sarah R. Kurtz, Y. Simon Tsuo, Raphael Tsu

Materials Science

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

10 Scopus Citations

Abstract

No correlation was found between the stress in hydrogenated amorphous silicon films and the light-induced effect, as measured by the photoconductivity. An equation is derived for calculation of the external stress applied to a film. The light-induced degradation in a]] zero-stress" film (one removed from the substrate) was shown to be equivalent to that of an as-deposited film.

Original language	American English
Pages (from-to)	951-953
Number of pages	3
Journal	Applied Physics Letters
Volume	49
Issue number	15
DOIs	https://doi.org/10.1063/1.97493 https://doi.org/10.1063/1.97493
State	Published - 1986

NREL Publication Number

ACNR/JA-212-8452

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title = "Correlation of Stress with Light-Induced Defects in Hydrogenated Amorphous Silicon Films",

abstract = "No correlation was found between the stress in hydrogenated amorphous silicon films and the light-induced effect, as measured by the photoconductivity. An equation is derived for calculation of the external stress applied to a film. The light-induced degradation in a]] zero-stress{"} film (one removed from the substrate) was shown to be equivalent to that of an as-deposited film.",

author = "Kurtz, {Sarah R.} and Tsuo, {Y. Simon} and Raphael Tsu",

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journal = "Applied Physics Letters",

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AU - Kurtz, Sarah R.

AU - Tsuo, Y. Simon

AU - Tsu, Raphael

PY - 1986

Y1 - 1986

N2 - No correlation was found between the stress in hydrogenated amorphous silicon films and the light-induced effect, as measured by the photoconductivity. An equation is derived for calculation of the external stress applied to a film. The light-induced degradation in a]] zero-stress" film (one removed from the substrate) was shown to be equivalent to that of an as-deposited film.

AB - No correlation was found between the stress in hydrogenated amorphous silicon films and the light-induced effect, as measured by the photoconductivity. An equation is derived for calculation of the external stress applied to a film. The light-induced degradation in a]] zero-stress" film (one removed from the substrate) was shown to be equivalent to that of an as-deposited film.

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U2 - 10.1063/1.97493

DO - 10.1063/1.97493

M3 - Article

AN - SCOPUS:0012039353

SN - 0003-6951

VL - 49

SP - 951

EP - 953

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

ER -

Correlation of Stress with Light-Induced Defects in Hydrogenated Amorphous Silicon Films

Abstract

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