Correlation of Stress with Light-Induced Defects in Hydrogenated Amorphous Silicon Films

Sarah R. Kurtz; Y. Simon Tsuo; Raphael Tsu

doi:10.1063/1.97493

Correlation of Stress with Light-Induced Defects in Hydrogenated Amorphous Silicon Films

Sarah R. Kurtz
, Y. Simon Tsuo
, Raphael Tsu

Materials Science

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

10 Scopus Citations

Abstract

No correlation was found between the stress in hydrogenated amorphous silicon films and the light-induced effect, as measured by the photoconductivity. An equation is derived for calculation of the external stress applied to a film. The light-induced degradation in a]] zero-stress" film (one removed from the substrate) was shown to be equivalent to that of an as-deposited film.

Original language	American English
Pages (from-to)	951-953
Number of pages	3
Journal	Applied Physics Letters
Volume	49
Issue number	15
DOIs	https://doi.org/10.1063/1.97493 https://doi.org/10.1063/1.97493
State	Published - 1986

NLR Publication Number

ACNR/JA-212-8452

Access to Document

Cite this

@article{4ccc3cf666c54a05b9b84cb8990c47c7,

title = "Correlation of Stress with Light-Induced Defects in Hydrogenated Amorphous Silicon Films",

abstract = "No correlation was found between the stress in hydrogenated amorphous silicon films and the light-induced effect, as measured by the photoconductivity. An equation is derived for calculation of the external stress applied to a film. The light-induced degradation in a]] zero-stress{"} film (one removed from the substrate) was shown to be equivalent to that of an as-deposited film.",

author = "Kurtz, \{Sarah R.\} and Tsuo, \{Y. Simon\} and Raphael Tsu",

year = "1986",

doi = "10.1063/1.97493",

language = "American English",

volume = "49",

pages = "951--953",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "15",

}

TY - JOUR

T1 - Correlation of Stress with Light-Induced Defects in Hydrogenated Amorphous Silicon Films

AU - Kurtz, Sarah R.

AU - Tsuo, Y. Simon

AU - Tsu, Raphael

PY - 1986

Y1 - 1986

N2 - No correlation was found between the stress in hydrogenated amorphous silicon films and the light-induced effect, as measured by the photoconductivity. An equation is derived for calculation of the external stress applied to a film. The light-induced degradation in a]] zero-stress" film (one removed from the substrate) was shown to be equivalent to that of an as-deposited film.

AB - No correlation was found between the stress in hydrogenated amorphous silicon films and the light-induced effect, as measured by the photoconductivity. An equation is derived for calculation of the external stress applied to a film. The light-induced degradation in a]] zero-stress" film (one removed from the substrate) was shown to be equivalent to that of an as-deposited film.

UR - https://www.scopus.com/pages/publications/0012039353

U2 - 10.1063/1.97493

DO - 10.1063/1.97493

M3 - Article

AN - SCOPUS:0012039353

SN - 0003-6951

VL - 49

SP - 951

EP - 953

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

ER -

Correlation of Stress with Light-Induced Defects in Hydrogenated Amorphous Silicon Films

Abstract

NLR Publication Number

Access to Document

Other files and links

Fingerprint

Cite this