Correlation of Stress with Photo-Degradation in Hydrogenated Amorphous Silicon Prepared by Hot-Wire CVD

Research output: Contribution to conferencePaper

Abstract

An innovative bending-beam method is used to study the stress of thin film a-Si:H deposited on thin quartz by hot-wire chemical vapor deposition (CVD) techniques. When the deposition temperature increases from 280 to 440 deg. C the hydrogen content decreases from 8 to <1 at.%, and the initial compressive stress also decreases from 420 to 74 MPa. We found that there is a 10/sup -4/ photo-inducedincrease of the initial compressive stress under 300 mW/cm2 light-soaking, which can be recovered to the initial value by thermal annealing at 160 deg. C for 1 h. The results imply that the Si-H bonds contribute to the compressive stress in the a-Si:H film. There is no simple correlation between the stress and the photodegradation of the electronic properties.
Original languageAmerican English
Pages445-450
Number of pages6
StatePublished - 1998
EventThin-Films Stresses and Mechanical Properties VII: Materials Research Society Symposium - Boston, Massachusetts
Duration: 1 Dec 19975 Dec 1997

Conference

ConferenceThin-Films Stresses and Mechanical Properties VII: Materials Research Society Symposium
CityBoston, Massachusetts
Period1/12/975/12/97

NREL Publication Number

  • NREL/CP-520-26562

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