Correlation of Stress with Photo-Degradation in Hydrogenated Amorphous Silicon Prepared by Hot-Wire CVD

Correlation of Stress with Photo-Degradation in Hydrogenated Amorphous Silicon Prepared by Hot-Wire CVD

Research output: Contribution to conference › Paper

Abstract

An innovative bending-beam method is used to study the stress of thin film a-Si:H deposited on thin quartz by hot-wire chemical vapor deposition (CVD) techniques. When the deposition temperature increases from 280 to 440 deg. C the hydrogen content decreases from 8 to <1 at.%, and the initial compressive stress also decreases from 420 to 74 MPa. We found that there is a 10/sup -4/ photo-inducedincrease of the initial compressive stress under 300 mW/cm2 light-soaking, which can be recovered to the initial value by thermal annealing at 160 deg. C for 1 h. The results imply that the Si-H bonds contribute to the compressive stress in the a-Si:H film. There is no simple correlation between the stress and the photodegradation of the electronic properties.

Original language	American English
Pages	445-450
Number of pages	6
State	Published - 1998
Event	Thin-Films Stresses and Mechanical Properties VII: Materials Research Society Symposium - Boston, Massachusetts Duration: 1 Dec 1997 → 5 Dec 1997

Conference

Conference	Thin-Films Stresses and Mechanical Properties VII: Materials Research Society Symposium
City	Boston, Massachusetts
Period	1/12/97 → 5/12/97

NREL Publication Number

NREL/CP-520-26562

Cite this

@conference{6b3725ec9eca434bba2e02c8923d4fa1,

title = "Correlation of Stress with Photo-Degradation in Hydrogenated Amorphous Silicon Prepared by Hot-Wire CVD",

abstract = "An innovative bending-beam method is used to study the stress of thin film a-Si:H deposited on thin quartz by hot-wire chemical vapor deposition (CVD) techniques. When the deposition temperature increases from 280 to 440 deg. C the hydrogen content decreases from 8 to <1 at.%, and the initial compressive stress also decreases from 420 to 74 MPa. We found that there is a 10/sup -4/ photo-inducedincrease of the initial compressive stress under 300 mW/cm2 light-soaking, which can be recovered to the initial value by thermal annealing at 160 deg. C for 1 h. The results imply that the Si-H bonds contribute to the compressive stress in the a-Si:H film. There is no simple correlation between the stress and the photodegradation of the electronic properties.",

author = "NREL",

year = "1998",

language = "American English",

pages = "445--450",

note = "Thin-Films Stresses and Mechanical Properties VII: Materials Research Society Symposium ; Conference date: 01-12-1997 Through 05-12-1997",

}

TY - CONF

T1 - Correlation of Stress with Photo-Degradation in Hydrogenated Amorphous Silicon Prepared by Hot-Wire CVD

AU - NREL, null

PY - 1998

Y1 - 1998

N2 - An innovative bending-beam method is used to study the stress of thin film a-Si:H deposited on thin quartz by hot-wire chemical vapor deposition (CVD) techniques. When the deposition temperature increases from 280 to 440 deg. C the hydrogen content decreases from 8 to <1 at.%, and the initial compressive stress also decreases from 420 to 74 MPa. We found that there is a 10/sup -4/ photo-inducedincrease of the initial compressive stress under 300 mW/cm2 light-soaking, which can be recovered to the initial value by thermal annealing at 160 deg. C for 1 h. The results imply that the Si-H bonds contribute to the compressive stress in the a-Si:H film. There is no simple correlation between the stress and the photodegradation of the electronic properties.

AB - An innovative bending-beam method is used to study the stress of thin film a-Si:H deposited on thin quartz by hot-wire chemical vapor deposition (CVD) techniques. When the deposition temperature increases from 280 to 440 deg. C the hydrogen content decreases from 8 to <1 at.%, and the initial compressive stress also decreases from 420 to 74 MPa. We found that there is a 10/sup -4/ photo-inducedincrease of the initial compressive stress under 300 mW/cm2 light-soaking, which can be recovered to the initial value by thermal annealing at 160 deg. C for 1 h. The results imply that the Si-H bonds contribute to the compressive stress in the a-Si:H film. There is no simple correlation between the stress and the photodegradation of the electronic properties.

M3 - Paper

SP - 445

EP - 450

T2 - Thin-Films Stresses and Mechanical Properties VII: Materials Research Society Symposium

Y2 - 1 December 1997 through 5 December 1997

ER -

Correlation of Stress with Photo-Degradation in Hydrogenated Amorphous Silicon Prepared by Hot-Wire CVD

Abstract

Conference

NREL Publication Number

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