Correlation of Structural and Electronic Properties with Solar Cell Efficiency for Amorphous Silicon Deposited at Increasing Growth Rates

Research output: Contribution to conferencePaper

Abstract

This paper details the effects of increasing the growth rate of hydrogenated amorphous silicon (a-Si:H), deposited by dc plasma chemical vapor deposition, on the structural and electronic properties of the material in comparison with the performance of solar cells incorporating such layers. The hydrogen content exhibits the strongest correlation with the solar cell efficiency. The defect densitymeasured by two different techniques, correlate poorly but when measured by a third technique, correlates well. On the other hand, the Urbach tail slope correlated well when measured by two different techniques but poorly when measured by a third one.
Original languageAmerican English
Number of pages4
StatePublished - 2003
EventNCPV and Solar Program Review Meeting - Denver, Colorado
Duration: 24 Mar 200326 Mar 2003

Conference

ConferenceNCPV and Solar Program Review Meeting
CityDenver, Colorado
Period24/03/0326/03/03

NREL Publication Number

  • NREL/CP-520-35643

Keywords

  • chemical vapor deposition (CVD)
  • hydrogenated amorphous silicon (a-Si:H)
  • solar cells

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