Abstract
This paper details the effects of increasing the growth rate of hydrogenated amorphous silicon (a-Si:H), deposited by dc plasma chemical vapor deposition, on the structural and electronic properties of the material in comparison with the performance of solar cells incorporating such layers. The hydrogen content exhibits the strongest correlation with the solar cell efficiency. The defect densitymeasured by two different techniques, correlate poorly but when measured by a third technique, correlates well. On the other hand, the Urbach tail slope correlated well when measured by two different techniques but poorly when measured by a third one.
Original language | American English |
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Number of pages | 4 |
State | Published - 2003 |
Event | NCPV and Solar Program Review Meeting - Denver, Colorado Duration: 24 Mar 2003 → 26 Mar 2003 |
Conference
Conference | NCPV and Solar Program Review Meeting |
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City | Denver, Colorado |
Period | 24/03/03 → 26/03/03 |
NREL Publication Number
- NREL/CP-520-35643
Keywords
- chemical vapor deposition (CVD)
- hydrogenated amorphous silicon (a-Si:H)
- solar cells