Abstract
In this paper we present the correlation of CdTe solar cell performance with capacitance-voltage hysteresis, defined presently as the difference in capacitance measured at zero-volt bias when collecting such data with different pre-measurement bias conditions. These correlations were obtained on CdTe cells stressed under conditions of 1-sun illumination, open-circuit bias, and an accelerationtemperature of approximately 100 degrees C.
Original language | American English |
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Number of pages | 8 |
State | Published - 2011 |
Event | 2010 IEEE International Reliability Physics Symposium (IRPS) - Garden Grove, California Duration: 2 May 2010 → 6 May 2010 |
Conference
Conference | 2010 IEEE International Reliability Physics Symposium (IRPS) |
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City | Garden Grove, California |
Period | 2/05/10 → 6/05/10 |
NREL Publication Number
- NREL/CP-5200-47761
Keywords
- cadmium telluride (CdTe) photovoltaic solar cells modules
- capacitance voltage (CV)
- deep level transient spectroscopy (DLTS)
- hysteresis
- photovoltaic
- transient capacitance
- transient ion drift (TID)