Correlations of Cu(In, Ga)Se2 Imaging with Device Performance, Defects, and Microstructural Properties

Steve Johnston; Thomas Unold; Ingrid Repins; Ana Kanevce; Katherine Zaunbrecher; Fei Yan; Jian V. Li; Patricia Dippo; Rajalakshmi Sundaramoorthy; Kim M. Jones; Bobby To

doi:10.1116/1.4714358

Correlations of Cu(In, Ga)Se2 Imaging with Device Performance, Defects, and Microstructural Properties

Steve Johnston, Thomas Unold, Ingrid Repins, Ana Kanevce, Katherine Zaunbrecher, Fei Yan, Jian V. Li, Patricia Dippo, Rajalakshmi Sundaramoorthy, Kim M. Jones, Bobby To

Research output: Contribution to journal › Article › peer-review

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Abstract

Camera imaging techniques have been used for the characterization of Cu(In,Ga)Se ₂ (CIGS) solar cells. Photoluminescence (PL) imaging shows brightness variations after the deposition of the CIGS layer that persist through CdS deposition and subsequent processing steps to finish the devices. PL and electroluminescence imaging on finished cells show a correlation to the devices' corresponding efficiency and open-circuit voltage (V _OC), and dark defect-related spots correspond to bright spots on images from illuminated lock-in thermography (LIT) and forward-bias dark LIT. These image-detected defect areas are weak diodes and shunts. Imaging provides locations of defects detrimental to solar cell performance. Some of these defects are analyzed in more detail by scanning electron microscopy using cross-sectional views.

Original language	American English
Article number	04D111
Number of pages	6
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	30
Issue number	4
DOIs	https://doi.org/10.1116/1.4714358 https://doi.org/10.1116/1.4714358
State	Published - Jul 2012

NREL Publication Number

NREL/JA-5200-55921

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Johnston, S., Unold, T., Repins, I., Kanevce, A., Zaunbrecher, K., Yan, F., Li, J. V., Dippo, P., Sundaramoorthy, R., Jones, K. M., & To, B. (2012). Correlations of Cu(In, Ga)Se2 Imaging with Device Performance, Defects, and Microstructural Properties. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 30(4), Article 04D111. https://doi.org/10.1116/1.4714358, https://doi.org/10.1116/1.4714358

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title = "Correlations of Cu(In, Ga)Se2 Imaging with Device Performance, Defects, and Microstructural Properties",

abstract = "Camera imaging techniques have been used for the characterization of Cu(In,Ga)Se 2 (CIGS) solar cells. Photoluminescence (PL) imaging shows brightness variations after the deposition of the CIGS layer that persist through CdS deposition and subsequent processing steps to finish the devices. PL and electroluminescence imaging on finished cells show a correlation to the devices' corresponding efficiency and open-circuit voltage (V OC), and dark defect-related spots correspond to bright spots on images from illuminated lock-in thermography (LIT) and forward-bias dark LIT. These image-detected defect areas are weak diodes and shunts. Imaging provides locations of defects detrimental to solar cell performance. Some of these defects are analyzed in more detail by scanning electron microscopy using cross-sectional views.",

author = "Steve Johnston and Thomas Unold and Ingrid Repins and Ana Kanevce and Katherine Zaunbrecher and Fei Yan and Li, {Jian V.} and Patricia Dippo and Rajalakshmi Sundaramoorthy and Jones, {Kim M.} and Bobby To",

year = "2012",

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doi = "10.1116/1.4714358",

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journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

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Johnston, S, Unold, T, Repins, I, Kanevce, A, Zaunbrecher, K, Yan, F, Li, JV, Dippo, P, Sundaramoorthy, R, Jones, KM & To, B 2012, 'Correlations of Cu(In, Ga)Se2 Imaging with Device Performance, Defects, and Microstructural Properties', Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, vol. 30, no. 4, 04D111. https://doi.org/10.1116/1.4714358, https://doi.org/10.1116/1.4714358

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AU - Johnston, Steve

AU - Unold, Thomas

AU - Repins, Ingrid

AU - Kanevce, Ana

AU - Zaunbrecher, Katherine

AU - Yan, Fei

AU - Li, Jian V.

AU - Dippo, Patricia

AU - Sundaramoorthy, Rajalakshmi

AU - Jones, Kim M.

AU - To, Bobby

PY - 2012/7

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N2 - Camera imaging techniques have been used for the characterization of Cu(In,Ga)Se 2 (CIGS) solar cells. Photoluminescence (PL) imaging shows brightness variations after the deposition of the CIGS layer that persist through CdS deposition and subsequent processing steps to finish the devices. PL and electroluminescence imaging on finished cells show a correlation to the devices' corresponding efficiency and open-circuit voltage (V OC), and dark defect-related spots correspond to bright spots on images from illuminated lock-in thermography (LIT) and forward-bias dark LIT. These image-detected defect areas are weak diodes and shunts. Imaging provides locations of defects detrimental to solar cell performance. Some of these defects are analyzed in more detail by scanning electron microscopy using cross-sectional views.

AB - Camera imaging techniques have been used for the characterization of Cu(In,Ga)Se 2 (CIGS) solar cells. Photoluminescence (PL) imaging shows brightness variations after the deposition of the CIGS layer that persist through CdS deposition and subsequent processing steps to finish the devices. PL and electroluminescence imaging on finished cells show a correlation to the devices' corresponding efficiency and open-circuit voltage (V OC), and dark defect-related spots correspond to bright spots on images from illuminated lock-in thermography (LIT) and forward-bias dark LIT. These image-detected defect areas are weak diodes and shunts. Imaging provides locations of defects detrimental to solar cell performance. Some of these defects are analyzed in more detail by scanning electron microscopy using cross-sectional views.

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Correlations of Cu(In, Ga)Se2 Imaging with Device Performance, Defects, and Microstructural Properties

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