Correlations of Photo-Electro-Thermal-Luminescent Imaging of Cu(In,Ga)Se2 with Device Performance, Defects, and Micro-Structural Properties

Steve Johnston, Ingrid Repins, Rajalakshmi Sundaramoorthy, Kim M. Jones, Bobby To

Research output: Contribution to conferencePaperpeer-review

5 Scopus Citations

Abstract

Several camera imaging techniques have been applied to the characterization of Cu(In,Ga)Se2(CIGS) solar cells having a range of efficiencies. Photoluminescence (PL) imaging shows brightness variations after the deposition of the CIGS layer that persist through CdS deposition and subsequent processing steps to finish the devices. PL and electroluminescence imaging on finished cells show a correlation to the devices' corresponding efficiency and open-circuit voltage (VOC), and dark defect-related spots correspond to bright spots on images from illuminated lock-in thermography (LIT) and forward-bias dark LIT. These image-detected defect areas are weak diodes and shunts. Imaging provides locations of defects detrimental to solar cell performance. Some of these defects are analyzed in more detail by scanning electron microscopy techniques using top and cross-sectional views.

Original languageAmerican English
Pages6-11
Number of pages6
DOIs
StatePublished - 2010
Event35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States
Duration: 20 Jun 201025 Jun 2010

Conference

Conference35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Country/TerritoryUnited States
CityHonolulu, HI
Period20/06/1025/06/10

NREL Publication Number

  • NREL/CP-520-47703

Keywords

  • camera imaging techniques
  • defects
  • device performance
  • solar photovoltaics

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