Correlative Characterization of Dislocation Defects and Defect Clusters in GaAs and CdTe Solar Cells by Spatially Resolved Optical Techniques and High-Resolution TEM

Q. Chen, B. McKeon, J. Becker, S. Zhang, C.-K. Hu, T. Gfroerer, Y.-H. Zhang, D. Smith, Y. Zhang

Research output: Contribution to conferencePaper

1 Scopus Citations

Abstract

An array of correlative and spatially-resolved techniques, including electroluminescence, photoluminescence, Raman, I-V curve, and high-resolution TEM, have been performed on both GaAs and CdTe solar cells, to study the impact of individual dislocation defects and defect clusters on device performance, the dependence of the impact on the device operation conditions, and the microscopic structures of the defects. This approach offers quantitative and definitive correlation between the atomistic structure of a defect and its effects in a real device.
Original languageAmerican English
Pages3234-3236
Number of pages3
DOIs
StatePublished - 2018
Event2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) - Waikoloa Village, Hawaii
Duration: 10 Jun 201815 Jun 2018

Conference

Conference2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC)
CityWaikoloa Village, Hawaii
Period10/06/1815/06/18

NREL Publication Number

  • NREL/CP-5K00-73681

Keywords

  • cadmium compounds
  • gallium arsenide
  • II-VI semiconductor materials
  • optical imaging
  • performance evaluation
  • photovoltaic cells

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