Abstract
Accurate modeling of charge transport and both thermal and luminescent radiation is crucial to the understanding and design of radiative thermal energy converters. Charge-carrier dynamics in semiconductors are well-described by the Poisson-drift-diffusion equations, and thermal radiation in emitter-absorber structures can be computed using multilayer fluctuational electrodynamics. These two types of energy flows interact through radiation absorption or luminescence and charge-carrier generation or recombination. However, past research has typically only assumed limited interaction, with thermal radiation absorption as an input for charge-carrier models to predict device performance. To examine this assumption, we develop a fully coupled iterative model of charge and radiation transport in semiconductor devices, and we use our model to analyze near-field and far-field GaSb thermophotovoltaic and thermoradiative systems. By comparing our results with past methods that do not consider cross-influences between charge and radiation transport, we find that a fully coupled approach is necessary to accurately model photon recycling and near-field enhancement of external luminescence. As these effects can substantially alter device performance, our modeling approach can aid in the design of efficient thermophotovoltaic and thermoradiative systems.
Original language | American English |
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Article number | Article No. 054035 |
Number of pages | 13 |
Journal | Physical Review Applied |
Volume | 15 |
Issue number | 5 |
DOIs | |
State | Published - May 2021 |
Bibliographical note
Publisher Copyright:© 2021 American Physical Society.
NREL Publication Number
- NREL/JA-5900-78663
Keywords
- charge transport
- near-field thermal radiation
- thermophotovoltaic
- thermoradiative